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600A 1200V Half Bridge Module IGBT Module Dgd600h120L2t Econodual3 Package

Price	$20.00
Min Order	240 Pieces
Availability	In Stock
Shipping From	Jiangsu, China
Popularity	419 people viewed

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Jiangsu Donghai Semiconductor Co.,Ltd

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Jiangsu, China
Winnie Gao
Saleman

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Product Detail

Model NO.:

DGD600H120L2T

Application:

Welding, UPS, Three-Leve Inverter

Batch Number:

2024

Manufacturing Technology:

Discrete Device

Material:

Metal-Oxide Semiconductor

Model:

Dgd600h120L2t

Package:

Econodual3

Type:

N-Type Semiconductor

Brand:

Wxdh

Trademark:

WXDH

Transport Package:

Box

Origin:

Wuxi, China

HS Code:

8541290000

Product Description

1 Description

These Insulated Gate Bipolar Transistor used advanced trench and

Fieldstop technology design, provided excellent VCEsat and switching

speed ,low gate charge. Which accords with the RoHS standard

Features

FS Trench Technology, Positive temperature
coefficient

Low saturation voltage: VCE(sat), typ = 2.25V
@ IC =75A and Tj = 25°C

Extremely enhanced avalanche capability

Applications

Welding

UPS

Three-leve Inverter

AC and DC servo drive amplifier

Type	VCE	IC	VCEsat,Tj=25ºC	Tjop	Package
DGD600H120L2T	1200V	600A (Tj=100ºC)	1.79V (Typ)	150ºC	EconoDUAL3

Electrical Characteristics
5.1Absolute Maximum Ratings (IGBT) (Tc=25ºC,unless otherwise specified)

PARAMETER			SYMBOL	VALUE		UNIT

Collector-to-Emitter Voltage			V_CE	1200		V
Gate-to-Emitter Voltage			V_GE	±25		V
DC Collector current			IcTj=100ºC	600		A
Pulsed Collector Current #1			I_CM	1200		A

5.2 Absolute Maximum Ratings (Diode) (Tc=25ºC,unless otherwise specified)

PARAMETER			SYMBOL	VALUE		UNIT

Peak Repetitive Reverse Voltage			VRRM	1200		V
DC Blocking Voltage			V_R	1200		V
Average Rectified Forward Current			IF(AV)	600		A
Repetitive Peak Surge Current			IFRM	1200		A

5.53IGBT Module

PARAMETER			SYMBOL	VALUE		UNIT

Junction Temperature Range			Tjmax	-40~175		ºC
Operating Junction Temperature			Tjop	-40~175		ºC
Storage Temperature Range			Tstg	-40~175		ºC
Isolation Voltage RMS,f=50Hz,t=1min			VISO	3500		A

5.4Thermal Characteristics(IGBT Module)

PARAMETER						SYMBOL	VALUE		UNIT

Thermal Resistance Junction to Case						IGBT RthJC	0.033		ºC/W
						Diode RthJC	0.065		ºC/W

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