Negotiable
5000 Pieces (MOQ)
5A 200V N-Channel Enhancement Mode Power Mosfet B5n20 to-251
Jiangsu Donghai Semiconductor Co.,Ltd
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80A 600V Fast Recovery Diode Mur8060DCT to-3p
| Price | $1.50 |
|---|---|
| Min Order | 5000 Pieces |
| Availability | In Stock |
| Shipping From | Jiangsu, China |
| Popularity | 300 people viewed |
Model NO.:
MUR8060DCT
Voltage:
600V
Current:
80A
Manufacturing Technology:
Discrete Device
Type:
N-type Semiconductor
Material:
Silicon
Package:
to-3p
Application:
Switching Power Supply
Model:
Mur8060DCT
Batch Number:
2021
Brand:
Wxdh
Trademark:
WXDH
Transport Package:
Tube
Origin:
Wuxi, China
HS Code:
8541100000
Product Description
| Features |
| Low power loss, |
| high efficiency Low forward voltage, |
| high current capability High surge capacity |
| Super fast recovery times |
| high voltage |
| Applications |
| Switching Power Supply |
| Power Switching Circuits |
| Inverter power supply |
| PARAMETER | SYMBOL | VALUE | UNIT | ||
| Peak Repetitive Reverse Voltage | VRRM | 600 | V | ||
| Working Peak Reverse Voltage | VRWM | 600 | V | ||
| DC Blocking Voltage | VR | 600 | V | ||
| Average Rectified Forward Current (single) | IF(AV) | 40 | A | ||
| Average Rectified Forward Current (double) | IF(AV) | 80 | A | ||
| Repetitive Peak Surge Current | IFRM | 60 | A | ||
| Nonrepetitive Peak Surge Current | t=8.3ms | IFSM | 400 | A | |
| Avalanche Energy(single) | L=1mH | EAS | 110 | mJ | |
| Junction Temperature | Tj | -55~150 | ºC | ||
| storage Temperature | Tstg | -55~150 | ºC | ||
| Product Specifications and Packaging Models | |||||
| Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
| MUR8060NCT | TO-3PN | MUR8060NCT | Pb-free | Tube | 300/box |
| MUR8060DCT | TO-3P | MUR8060DCT | Pb-free | Tube | 300/box |
| MUR8060BCT | TO-247 | MUR8060BCT | Pb-free | Tube | 300/box |
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