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8inch Ultra-P Grade 4h N Type Semiconductor Silicon Carbide Wafer Sic Substrate
| Price | $2500.00 |
|---|---|
| Min Order | 3 piece |
| Availability | In Stock |
| Shipping From | Zhejiang, China |
| Popularity | 355 people viewed |
Model NO.:
4H N-type Ultra-P Grade
Application:
Diode, Power Electronic Components
Certification:
RoHS
Manufacturing Technology:
Pvt
Material:
6n Sic Powder
Model:
4h N-Type
Package:
Epi-Ready with Vacuum Packaging
Type:
N-Type Semiconductor
Diameter:
8 Inch
Thickness:
500±25μm
Poly Type:
4h
Resistivity:
0.015~0.025ohm·cm
Ttv:
≤7μm
Warp:
≤30μm
(Afm) Front (Si-Face) Roughness:
Ra≤0.2nm
Trademark:
HC
Transport Package:
Multi-Waferorsingle Wafer Cassette Packaging
Specification:
8Inch 4H N-type
Origin:
China
HS Code:
2804611900
Product Description
The 8-inch N-type silicon carbide substrate is mainly used in new energy vehicles, high-voltage transmission and substations, white appliances, high-speed trains, motors, photovoltaic inverters, pulse power supplies and other fields. It has the advantages of reducing equipment energy loss, improving equipment reliability, reducing equipment size, and improving equipment performance. It has irreplaceable advantages in the manufacture of power electronic devices.
8 Inch N-type SiC substrate wafer
| No. | Items | Unit | Ultra-P Grade | Production Grade | Dummy Grade | |
| 1.Boule Parameters | ||||||
| 1.1 | Polytype | -- | 4H | 4H | 4H | |
| 1.2 | Surface orientation | ° | 4°toward<11-20>±0.5º | 4°toward<11-20>±0.5º | 4°toward<11-20>±0.5º | |
| 2. Electrical Parameters | ||||||
| 2.1 | Dopant | -- | n-type Nitrogen | n-type Nitrogen | n-type Nitrogen | |
| 2.2 | Resistivity | ohm·cm | 0.015~0.025ohm·cm | 0.015~0.025ohm·cm | NA | |
| 3. Mechanical Parameters | ||||||
| 3.1 | Diameter | mm | 200.0±0.2mm | 200.0±0.2mm | 200.0±0.2mm | |
| 3.2 | Thickness | μm | 500±25μm | 500±25μm | 500±25μm | |
| 3.3 | Notch orientation | ° | [1-100]±5° | [1-100]±5° | [1-100]±5° | |
| 3.4 | Notch depth | mm | 1~1.5mm | 1~1.5mm | 1~1.5mm | |
| 3.5 | LTV | μm | ≤3μm(10mm*10mm) | ≤5μm(10mm*10mm) | ≤15μm(10mm*10mm) | |
| 3.6 | TTV | μm | ≤7μm | ≤10μm | ≤20μm | |
| 3.7 | Bow | μm | -20μm~20μm | -25μm~25μm | -65μm~65μm | |
| 3.8 | Warp | μm | ≤30μm | ≤35μm | ≤70μm | |
| 3.9 | (AFM) Front (Si-face) Roughness | nm | Ra≤0.2nm | Ra≤0.2nm | Ra≤0.2nm | |
| 4. Structure | ||||||
| 4.1 | Micropipe density | ea/cm2 | <0.2ea/cm2 | <2ea/cm2 | <50ea/cm2 | |
| 4.2 | Metal impurities | atoms/cm2 | ≤1E11atoms/cm2(Al, Cr, Fe, Ni, Cu, Zn, Pb, Na, K, Ti, Ca, V, Mn) | ≤1E11atoms/cm2(Al, Cr, Fe, Ni, Cu, Zn, Pb, Na, K, Ti, Ca, V,Mn) | ≤1E11atoms/cm2(Al, Cr, Fe, Ni, Cu, Zn, Pb, Na, K, Ti, Ca, V, Mn) | |
| 4.3 | TSD | ea/cm2 | ≤200ea/cm2 | ≤500ea/cm2 | NA | |
| 4.4 | BPD | ea/cm2 | ≤1000ea/cm2 | ≤2000ea/cm2 | NA | |
| 4.5 | TED | ea/cm2 | ≤3000ea/cm2 | ≤7000ea/cm2 | NA | |
| 5.Front Quality | ||||||
| 5.1 | Front | -- | Si | Si | Si | |
| 5.2 | Surface Finish | -- | CMP Si-face CMP | CMP Si-face CMP | CMP Si-face CMP | |
| 5.3 | Particles | ea/wafer | ≤60(size≥0.3μm) | ≤100(size≥0.3μm) | NA | |
| 5.4 | Scratches | ea/mm | ≤5,Total Length≤ 1/2*Diameter | ≤5,Total Length≤Diameter | NA | |
| 5.5 | Edge chips/indents/cracks/contamination/stains | -- | None | None | NA | |
| 5.6 | Polytype areas | -- | None | None | ≤30%Cumulative area) | |
| 5.7 | Front laser marking | -- | None | None | None | |
| 6. Back Quality | ||||||
| 6.1 | Back finish | -- | C-face polished | C-face polished | C-face polished | |
| 6.2 | Scratches | ea/mm | ≤5,Total Length≤Diameter | NA | NA | |
| 6.3 | Back defects (edge chips/indents) | -- | None | None | NA | |
| 6.4 | Back roughness | nm | Ra≤5nm | Ra≤5nm | Ra≤5nm | |
| 6.5 | Back laser marking | -- | Notch, SEMI | Notch, SEMI | Notch, SEMI | |
| 7.Edge | ||||||
| 7.1 | Edge | -- | Chamfer | Chamfer | Chamfer | |
| 8. Packaging | ||||||
| 8.1 | Packaging | -- | Epi-ready with vacuum packaging | Epi-ready with vacuum packaging | Epi-ready with vacuum packaging | |
| 8.2 | Packaging | -- | Multi-wafer or single wafer cassette packaging | Multi-wafer or single wafer cassette packaging | Multi-wafer or single wafer cassette packaging | |
| Notes: "NA"means no request. Items not metioned may refer to SEMI-STD. | ||||||
Q1: What's the way of shipping ?
A: We accept DHL, Fedex, TNT, UPS, EMS, SF and etc.
Q2: How to pay?
A: T/T, PayPal and etc..
Q3: What's the deliver time?
A: For inventory: the delivery time is 10 workdays. For customized products: the delivery time is 10to 25 workdays. According to the quantity.
Q4: Can I customize the products based on my need?
A: Yes, we can customize the specifications according to your needs.
Q5: How to guarantee the quality of your products?
A: Strict detection during production.Strict sampling inspection on products before shipment and intact product packaging ensured.
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