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Battery Protection To263 Sfg110n12kf Vds-120V ID-330A N-Channel Power Mosfet

Price $0.50
Min Order 800 Pieces
Availability In Stock
Shipping From Shanghai, China
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Model NO.:
To263 SFG110N12KF
Certification:
RoHS, ISO
Shape:
Metal Porcelain Tube
Shielding Type:
Sharp Cutoff Shielding Tube
Cooling Method:
Air Cooled Tube
Function:
Switch Transistor
Working Frequency:
High Frequency
Structure:
Planar
Encapsulation Structure:
Chip Transistor
Power Level:
High Power
Material:
Silicon
Trademark:
Orientalsemi
Transport Package:
Carton
Specification:
35x30x37cm
Origin:
China
HS Code:
8541290000
Product Description

General Description
SFGMOS®  MOSFET is based on Oriental Semiconductor's unique device design to achieve low RDS(ON) ,  low gate charge, fast switching and excellent avalanche  characteristics. The  high Vth series is specially optimized for high systems with gate driving voltage greater than 10V.
 

Features
     Low RDS(ON) & FOM
     Extremely low switching loss
     Excellent stability and uniformity
     Fast switching and soft recovery


Applications
     Switched mode power supply
     Motor driver
     Battery protection
     DC-DC convertor
     Solar inverter
     UPS and energy inverter


Key Performance Parameters
 
ParameterValueUnit
VDS, min @ Tj(max)120V
ID, pulse330A
RDS(ON), max @ VGS =10V6.5mΩ
Qg68.9nC



Absolute Maximum Ratings at Tj =25°C unless otherwise noted
ParameterSymbolValueUnit
Drain source voltageVDS120V
Gate source voltageVGS±20V
Continuous drain current1) , TC=25 °CID110A
Pulsed drain current2) , TC=25 °CID, pulse330A
Continuous diode forward current1) , TC=25 °CIS110A
Diode pulsed current2) , TC=25 °CIS, pulse330A
Power dissipation3) , TC=25 °CPD192W
Single pulsed avalanche energy5)EAS400mJ
Operation and storage temperatureTstg ,Tj-55 to 150°C


Thermal Characteristics
ParameterSymbolValueUnit
Thermal resistance, junction-caseRθJC0.65°C/W
Thermal resistance, junction-ambient4)RθJA62°C/W


Electrical Characteristics at Tj =25°C unless otherwise specified
ParameterSymbolMin.Typ.Max.UnitTest condition
Drain-source         breakdown voltageBVDSS120  VVGS =0 V, ID =250 pA
Gate threshold
voltage		VGS(th)2.0 4.0VVDS =VGS , ID =250 pA
Drain-source
on-state resistance		RDS(ON) 5.06.5mQVGS =10 V, ID=30 A
Gate-source
leakage current
IGSS		  100
nA		VGS =20 V
  - 100VGS =-20 V
Drain-source
leakage current		IDSS  1pAVDS =120 V, VGS =0 V


Note
1)   Calculated continuous current based on maximum allowable junction temperature.
2)   Repetitive rating; pulse width limited by max. junction temperature.
3)   Pd is based on max. junction temperature, using junction-case thermal resistance.
4)    The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
5)    VDD=50 V,VGS=10 V, L=0.3 mH, starting Tj =25 °C.
 
 

Ordering Information
 
Package
Type		Units/
Reel		Reels /   Inner BoxUnits/   Inner BoxInner Boxes/ Carton BoxUnits/     Carton Box
TO263-C800180054000


Product Information
ProductPackagePb FreeRoHSHalogen Free
SFG110N12KFTO263yesyesyes

 

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