Audited Supplier
To263 SFG110N12KF
RoHS, ISO
Metal Porcelain Tube
Sharp Cutoff Shielding Tube
Air Cooled Tube
Switch Transistor
High Frequency
Planar
Chip Transistor
High Power
Silicon
Orientalsemi
Carton
35x30x37cm
China
8541290000
Product Description
General Description
SFGMOS® MOSFET is based on Oriental Semiconductor's unique device design to achieve low RDS(ON) , low gate charge, fast switching and excellent avalanche characteristics. The high Vth series is specially optimized for high systems with gate driving voltage greater than 10V.
FeaturesLow RDS(ON) & FOM
Extremely low switching loss
Excellent stability and uniformity
Fast switching and soft recovery
Applications
Switched mode power supply
Motor driver
Battery protection
DC-DC convertor
Solar inverter
UPS and energy inverter
Key Performance Parameters
| Parameter | Value | Unit |
| VDS, min @ Tj(max) | 120 | V |
| ID, pulse | 330 | A |
| RDS(ON), max @ VGS =10V | 6.5 | mΩ |
| Qg | 68.9 | nC |
Absolute Maximum Ratings at Tj =25°C unless otherwise noted
| Parameter | Symbol | Value | Unit |
| Drain source voltage | VDS | 120 | V |
| Gate source voltage | VGS | ±20 | V |
| Continuous drain current1) , TC=25 °C | ID | 110 | A |
| Pulsed drain current2) , TC=25 °C | ID, pulse | 330 | A |
| Continuous diode forward current1) , TC=25 °C | IS | 110 | A |
| Diode pulsed current2) , TC=25 °C | IS, pulse | 330 | A |
| Power dissipation3) , TC=25 °C | PD | 192 | W |
| Single pulsed avalanche energy5) | EAS | 400 | mJ |
| Operation and storage temperature | Tstg ,Tj | -55 to 150 | °C |
Thermal Characteristics
| Parameter | Symbol | Value | Unit |
| Thermal resistance, junction-case | RθJC | 0.65 | °C/W |
| Thermal resistance, junction-ambient4) | RθJA | 62 | °C/W |
Electrical Characteristics at Tj =25°C unless otherwise specified
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Drain-source breakdown voltage | BVDSS | 120 | V | VGS =0 V, ID =250 pA | ||
| Gate threshold voltage | VGS(th) | 2.0 | 4.0 | V | VDS =VGS , ID =250 pA | |
| Drain-source on-state resistance | RDS(ON) | 5.0 | 6.5 | mQ | VGS =10 V, ID=30 A | |
| Gate-source leakage current | IGSS | 100 | nA | VGS =20 V | ||
| - 100 | VGS =-20 V | |||||
| Drain-source leakage current | IDSS | 1 | pA | VDS =120 V, VGS =0 V |
Note
1) Calculated continuous current based on maximum allowable junction temperature.
2) Repetitive rating; pulse width limited by max. junction temperature.
3) Pd is based on max. junction temperature, using junction-case thermal resistance.
4) The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
5) VDD=50 V,VGS=10 V, L=0.3 mH, starting Tj =25 °C.
Ordering Information
| Package Type | Units/ Reel | Reels / Inner Box | Units/ Inner Box | Inner Boxes/ Carton Box | Units/ Carton Box |
| TO263-C | 800 | 1 | 800 | 5 | 4000 |
Product Information
| Product | Package | Pb Free | RoHS | Halogen Free |
| SFG110N12KF | TO263 | yes | yes | yes |
Supply Chain
Green Product Declaration
