Audited Supplier
TO220 OSG95R1K2PF
RoHS, ISO
ST
Remote Cut-Off Shielding Tube
Air Cooled Tube
Switch Transistor
High Frequency
Planar
Chip Transistor
High Power
Silicon
Orientalsemi
Carton
35x30x37cm
China
8541290000
Product Description
General Description
The GreenMOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.
The GreenMOS® Generic series is optimized for extreme switching performance to minimize switching loss. It is tailored for high power density applications to meet the highest efficiency standards.
Features
Low RDS(ON) & FOM
Extremely low switching loss
Excellent stability and uniformity
Applications
PC power
LED lighting
Telecom power
Server power
EV Charger
Solar/UPS
Key Performance Parameters
| Parameter | Value | Unit |
| VDS, min @ Tj(max) | 1000 | V |
| ID, pulse | 15 | A |
| RDS(ON) , max @ VGS =10V | 1.2 | Ω |
| Qg | 14.9 | nC |
Absolute Maximum Ratings at Tj =25°C unless otherwise noted
| Parameter | Symbol | Value | Unit |
| Drain-source voltage | VDS | 950 | V |
| Gate-source voltage | VGS | ±30 | V |
| Continuous drain current1) , TC=25 °C | ID | 5 | A |
| Continuous drain current1) , TC=100 °C | 3.2 | ||
| Pulsed drain current2) , TC=25 °C | ID, pulse | 15 | A |
| Continuous diode forward current1) , TC=25 °C | IS | 5 | A |
| Diode pulsed current2) , TC=25 °C | IS, pulse | 15 | A |
| Power dissipation3) , TC=25 °C | PD | 83 | W |
| Single pulsed avalanche energy5) | EAS | 160 | mJ |
| MOSFET dv/dt ruggedness, VDS =0…480 V | dv/dt | 50 | V/ns |
| Reverse diode dv/dt, VDS =0…480 V, ISD≤ID | dv/dt | 15 | V/ns |
| Operation and storage temperature | Tstg , Tj | -55 to 150 | °C |
Electrical Characteristics at Tj =25°C unless otherwise specified
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Drain-source breakdown voltage | BVDSS | 950 | V | VGS =0 V, ID =250 μA | ||
| 1000 | VGS =0 V, ID =250 μA, Tj =150 °C | |||||
| Gate threshold voltage | VGS(th) | 2.9 | 3.9 | V | VDS =VGS , ID =250 μA | |
| Drain-source on- state resistance | RDS(ON) | 0.92 | 1.2 | Ω | VGS =10 V, ID=2 A | |
| 2.82 | VGS =10 V, ID=2 A, Tj =150 °C | |||||
| Gate-source leakage current | IGSS | 100 | nA | VGS =30 V | ||
| - 100 | VGS =-30 V | |||||
| Drain-source leakage current | IDSS | 10 | μA | VDS =950 V, VGS =0 V | ||
| Gate resistance | RG | 29.5 | Ω | f=1 MHz, Open drain |
Note
1) Calculated continuous current based on maximum allowable junction temperature.
2) Repetitive rating; pulse width limited by max. junction temperature.
3) Pd is based on max. junction temperature, using junction-case thermal resistance.
4) The value of RθJA is measured with the device mounted on 1 in square FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
5) VDD=100 V, VGS =10 V, L=79.9 mH, starting Tj =25 °C.
Ordering Information
| Package Type | Units/ Tube | Tubes/ Inner Box | Units/ Inner Box | Inner Boxes/ Carton Box | Units/ Carton Box |
| TO220-P | 50 | 20 | 1000 | 6 | 6000 |
Product Information
| Product | Package | Pb Free | RoHS | Halogen Free |
| OSG95R1K2PF | TO220 | yes | yes | yes |
Supply Chain
Green Product Declaration
