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To247 Ost90n65hm2f Vces-650V Maximum Junction Temperature175, IC, Pulse-360A N-Channel Power IGBT

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Shanghai Winture Electric Co., Ltd.

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Shanghai, China
Joy Li (Ms.)

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Model NO.:

TO247 OST90N65HM2F

Certification:

RoHS, ISO

Shape:

Subminiature

Shielding Type:

Remote Cut-Off Shielding Tube

Cooling Method:

Air Cooled Tube

Function:

Switch Transistor

Working Frequency:

High Frequency

Structure:

Planar

Encapsulation Structure:

Chip Transistor

Power Level:

High Power

Material:

Silicon

Trademark:

Orientalsemi

Transport Package:

Carton

Specification:

35x30x37cm

Origin:

China

HS Code:

8541290000

Product Description

General Description
OST90N65HM2F uses advanced Oriental-Semi's patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low VCE(sat), low gate charge, and excellent switching performance. This device is suitable for mid to high range switching frequency converters.

Features
     Advanced TGBTTM technology
     Excellent conduction and switching loss
     Excellent stability and uniformity
     Fast and soft antiparallel diode

Applications
     Induction converters
     Uninterruptible power supplies

Key Performance Parameters

Parameter	Value	Unit
VCES, min @ 25°C	650	V
Maximum junction temperature	175	°C
IC, pulse	360	A
VCE(sat), typ @ VGE=15V	1.5	V
Qg	170	nC

Absolute Maximum Ratings at Tvj=25°C unless otherwise noted

Parameter	Symbol	Value	Unit
Collector emitter voltage	VCES	650	V
Gate emitter voltage	VGES	±20	V
Transient gate emitter voltage, TP≤10µs, D<0.01	VGES	±30	V
Continuous collector current1) , TC=25ºC	IC	120	A
Continuous collector current1) , TC=100ºC	IC	90	A
Pulsed collector current2) , TC=25ºC	IC, pulse	360	A
Diode forward current1) , TC=25ºC	IF	120	A
Diode forward current1) , TC=100ºC	IF	90	A
Diode pulsed current2) , TC=25ºC	IF, pulse	360	A
Power dissipation3) , TC=25ºC	PD	395	W
Power dissipation3) , TC=100ºC	PD	198	W
Operation and storage temperature	Tstg, Tvj	-55 to 175	°C

Thermal Characteristics

Parameter	Symbol	Value	Unit
IGBT thermal resistance, junction-case	RθJC	0.38	°C/W
Diode thermal resistance, junction-case	RθJC	0.68	°C/W
Thermal resistance, junction-ambient4)	RθJA	40	°C/W

Electrical Characteristics at Tvj =25°C unless otherwise specified

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Collector-emitter breakdown voltage	V(BR)CES	650			V	VGE =0 V, IC =0.5 mA
Collector-emitter saturation voltage	VCE(sat)		1.5	1.9	V	VGE =15 V, IC=90 A Tvj=25°C
			1.7		V	VGE =15 V, IC=90 A, Tvj =125°C
			1.8			VGE =15 V, IC=90 A, Tvj =175°C
Gate-emitter threshold voltage	VGE(th)	3.0	4.2	5.5	V	VCE =VGE , ID =0.5 mA
Diode forward voltage	VF		1.75	2.2	V	VGE =0 V, IF =90 A Tvj =25°C
			1.65			VGE =0 V, IF =90 A, Tvj =125°C
			1.55			VGE =0 V, IF =90 A, Tvj =175°C
Gate-emitter leakage current	IGES			100	nA	VCE =0 V, VGE=20 V
Zero gate voltage collector current	ICES			10	μA	VCE =650 V, VGE =0 V

Gate Charge Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Total gate charge	Qg		170		nC	VGE =15 V, VCC=520 V, IC=90 A
Gate-emitter charge	Qge		78		nC
Gate-collector charge	Qgc		29		nC

Body Diode Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Diode reverse recovery time	trr		80		ns	VR =400 V, IF=90 A, diF/dt=500 A/μs Tvj = 25°C
Diode reverse recovery charge	Qrr		832		nC
Diode peak reverse recovery current	Irrm		17		A

Note
1) Calculated continuous current based on maximum allowable junction temperature.
2) Repetitive rating; pulse width limited by max. junction temperature.
3) Pd is based on max. junction temperature, using junction-case thermal resistance.

Ordering Information

Package Type	Units/ Tube	Tubes/ Inner Box	Units/ Inner Box	Inner Boxes/ Carton Box	Units/ Carton Box
TO247-J	30	20	600	4	2400