Audited Supplier
TO220 SFG110N12PF
RoHS, ISO
Metal Porcelain Tube
Sharp Cutoff Shielding Tube
Air Cooled Tube
Switch Transistor
High Frequency
Planar
Chip Transistor
High Power
Silicon
Orientalsemi
Carton
35cm x 37cm x 30cm
8541290000
Product Description
General Description
SFGMOS® MOSFET is based on Oriental Semiconductor's unique device design to achieve low RDS(ON) , low gate charge, fast switching and excellent avalanche characteristics. The high Vth series is specially optimized for high systems with gate driving voltage greater than 10V.
Features
Low RDS(ON) & FOM
Extremely low switching loss
Excellent stability and uniformity
Fast switching and soft recovery
Applications
Switched mode power supply
Motor driver
Battery protection
DC-DC convertor
Solar inverter
UPS and energy inverter
Key Performance Parameters
| Parameter | Value | Unit |
| VDS, min @ Tj(max) | 120 | V |
| ID, pulse | 330 | A |
| RDS(ON), max @ VGS =10V | 6.5 | mΩ |
| Qg | 68.9 | nC |
Absolute Maximum Ratings at Tj =25°C unless otherwise noted
Thermal Characteristics
Electrical Characteristics at Tj =25°C unless otherwise specified
| Parameter | Symbol | Value | Unit |
| Drain source voltage | VDS | 120 | V |
| Gate source voltage | VGS | ±20 | V |
| Continuous drain current1) , TC=25 °C | ID | 110 | A |
| Pulsed drain current2) , TC=25 °C | ID, pulse | 330 | A |
| Continuous diode forward current1) , TC=25 °C | IS | 110 | A |
| Diode pulsed current2) , TC=25 °C | IS, pulse | 330 | A |
| Power dissipation3) , TC=25 °C | PD | 192 | W |
| Single pulsed avalanche energy5) | EAS | 400 | mJ |
| Operation and storage temperature | Tstg ,Tj | -55 to 150 | °C |
Thermal Characteristics
| Parameter | Symbol | Value | Unit |
| Thermal resistance, junction-case | RθJC | 0.65 | °C/W |
| Thermal resistance, junction-ambient4) | RθJA | 62 | °C/W |
Electrical Characteristics at Tj =25°C unless otherwise specified
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Drain-source breakdown voltage | BVDSS | 120 | V | VGS =0 V, ID =250 μA | ||
| Gate threshold voltage | VGS(th) | 2.0 | 4.0 | V | VDS =VGS , ID =250 μA | |
| Drain-source on-state resistance | RDS(ON) | 5.0 | 6.5 | mΩ | VGS =10 V, ID=30 A | |
| Gate-source leakage current | IGSS | 100 | nA | VGS =20 V | ||
| - 100 | VGS =-20 V | |||||
| Drain-source leakage current | IDSS | 1 | μA | VDS =120 V, VGS =0 V |
Dynamic Characteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Input capacitance | Ciss | 5823 | pF | VGS =0 V, VDS =50 V, ƒ=100 kHz | ||
| Output capacitance | Coss | 779 | pF | |||
| Reverse transfer capacitance | Crss | 17.5 | pF | |||
| Turn-on delay time | td(on) | 30.3 | ns | VGS =10 V, VDS =50 V, RG=2 Ω, ID=25 A | ||
| Rise time | tr | 33 | ns | |||
| Turn-off delay time | td(off) | 59.5 | ns | |||
| Fall time | tf | 11.7 | ns |
Gate Charge Characteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Total gate charge | Qg | 68.9 | nC | VGS =10 V, VDS =50 V, ID=25 A | ||
| Gate-source charge | Qgs | 18.1 | nC | |||
| Gate-drain charge | Qgd | 15.9 | nC | |||
| Gate plateau voltage | Vplateau | 4.8 | V |
Note
1) Calculated continuous current based on maximum allowable junction temperature.
2) Repetitive rating; pulse width limited by max. junction temperature.
3) Pd is based on max. junction temperature, using junction-case thermal resistance.
4) The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
5) VDD=50 V,VGS=10 V, L=0.3 mH, starting Tj =25 °C.
Ordering Information
| Package Type | Units/ Tube | Tubes / Inner Box | Units/ Inner Box | Inner Boxes/ Carton Box | Units/ Carton Box |
| TO220-C | 50 | 20 | 1000 | 6 | 6000 |
| TO220-J | 50 | 20 | 1000 | 5 | 5000 |
Product Information
| Product | Package | Pb Free | RoHS | Halogen Free |
| SFG110N12PF | TO220 | yes | yes | yes |
Supply Chain
Green Product Declaration
