Transistor Enhancement To220 Sfg110n12PF Vds-120V ID-330A RDS (ON) -6.5milliohm Qg-68.9nc for Battery Protection Solar Inverter N-Channel Power Mosfet

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Shanghai Winture Electric Co., Ltd.

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Profile Certified by SGS/BV
TO220 SFG110N12PF
RoHS, ISO
Metal Porcelain Tube
Sharp Cutoff Shielding Tube
Air Cooled Tube
Switch Transistor
High Frequency
Planar
Chip Transistor
High Power
Silicon
Orientalsemi
Carton
35cm x 37cm x 30cm
8541290000
Product Description

General Description
SFGMOS®  MOSFET is based on Oriental Semiconductor's unique device design to achieve low RDS(ON) ,  low gate charge, fast switching and excellent avalanche  characteristics. The  high Vth series is specially optimized for high systems with gate driving voltage greater than 10V.

Features
     Low RDS(ON) & FOM
     Extremely low switching loss
     Excellent stability and uniformity
     Fast switching and soft recovery

Applications
     Switched mode power supply
     Motor driver
     Battery protection
     DC-DC convertor
     Solar inverter
     UPS and energy inverter

Key Performance Parameters

ParameterValueUnit
VDS, min @ Tj(max)120V
ID, pulse330A
RDS(ON), max @ VGS =10V6.5mΩ
Qg68.9nC


 

Absolute Maximum Ratings at Tj =25°C unless otherwise noted

 
ParameterSymbolValueUnit
Drain source voltageVDS120V
Gate source voltageVGS±20V
Continuous drain current1) , TC=25 °CID110A
Pulsed drain current2) , TC=25 °CID, pulse330A
Continuous diode forward current1) , TC=25 °CIS110A
Diode pulsed current2) , TC=25 °CIS, pulse330A
Power dissipation3) , TC=25 °CPD192W
Single pulsed avalanche energy5)EAS400mJ
Operation and storage temperatureTstg ,Tj-55 to 150°C

Thermal Characteristics
 
ParameterSymbolValueUnit
Thermal resistance, junction-caseRθJC0.65°C/W
Thermal resistance, junction-ambient4)RθJA62°C/W

Electrical Characteristics at Tj =25°C unless otherwise specified
 
ParameterSymbolMin.Typ.Max.UnitTest condition
Drain-source         breakdown voltageBVDSS120  VVGS =0 V, ID =250 μA
Gate threshold
voltage
VGS(th)2.0 4.0VVDS =VGS , ID =250 μA
Drain-source
on-state resistance
RDS(ON) 5.06.5mΩVGS =10 V, ID=30 A
Gate-source
leakage current

IGSS
  100
nA
VGS =20 V
  - 100VGS =-20 V
Drain-source
leakage current
IDSS  1μAVDS =120 V, VGS =0 V


Dynamic Characteristics
 
ParameterSymbolMin.Typ.Max.UnitTest condition
Input capacitanceCiss 5823 pF
VGS =0 V,
VDS =50 V,
ƒ=100 kHz
Output capacitanceCoss 779 pF
Reverse transfer capacitanceCrss 17.5 pF
Turn-on delay timetd(on) 30.3 ns
VGS =10 V,
VDS =50 V,
RG=2 Ω,
ID=25 A
Rise timetr 33 ns
Turn-off delay timetd(off) 59.5 ns
Fall timetf 11.7 ns

Gate Charge Characteristics
 
ParameterSymbolMin.Typ.Max.UnitTest condition
Total gate chargeQg 68.9 nC
VGS =10 V,
VDS =50 V,
ID=25 A
Gate-source chargeQgs 18.1 nC
Gate-drain chargeQgd 15.9 nC
Gate plateau voltageVplateau 4.8 V
 

Note
1)   Calculated continuous current based on maximum allowable junction temperature.
2)   Repetitive rating; pulse width limited by max. junction temperature.
3)   Pd is based on max. junction temperature, using junction-case thermal resistance.
4)    The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
5)    VDD=50 V,VGS=10 V, L=0.3 mH, starting Tj =25 °C.

Ordering Information

Package
Type
Units/
Tube
Tubes /  Inner BoxUnits/   Inner BoxInner Boxes/ Carton BoxUnits/     Carton Box
TO220-C5020100066000
TO220-J5020100055000


Product Information
 
ProductPackagePb FreeRoHSHalogen Free
SFG110N12PFTO220yesyesyes


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