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Power Mosfet To252 Osg80r650df Vds-850V ID-24A RDS (ON) -650milliohm Qg-12.1nc

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Shanghai Winture Electric Co., Ltd.

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Shanghai, China
Joy Li (Ms.)

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Model NO.:

TO252 OSG80R650DF

Certification:

RoHS, ISO

Shape:

Metal Porcelain Tube

Shielding Type:

Sharp Cutoff Shielding Tube

Cooling Method:

Air Cooled Tube

Function:

Switch Transistor

Working Frequency:

High Frequency

Structure:

Planar

Encapsulation Structure:

Chip Transistor

Power Level:

High Power

Material:

Silicon

Trademark:

Orientalsemi

Origin:

China

HS Code:

8541290000

Product Description

General Description
The GreenMOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.
The GreenMOS® Generic series is optimized for extreme switching performance to minimize switching loss. It is tailored for high power density applications to meet the highest efficiency standards.

Features
     Low RDS(ON) & FOM
     Extremely low switching loss
     Excellent stability and uniformity

Applications
     PC power
     LED lighting
     Telecom power
     Server power
     EV Charger
     Solar/UPS

Key Performance Parameters

Parameter	Value	Unit
VDS, min @ Tj(max)	850	V
ID, pulse	24	A
RDS(ON) , max @ VGS =10V	650	mΩ
Qg	12. 1	nC

Absolute Maximum Ratings at Tj =25°C unless otherwise noted

Parameter	Symbol	Value	Unit
Drain-source voltage	VDS	800	V
Gate-source voltage	VGS	±30	V
Continuous drain current1) , TC=25 °C	ID	8	A
Continuous drain current1) , TC=100 °C	ID	5	A
Pulsed drain current2) , TC=25 °C	ID, pulse	24	A
Continuous diode forward current1) , TC=25 °C	IS	8	A
Diode pulsed current2) , TC=25 °C	IS, pulse	24	A
Power dissipation3) , TC=25 °C	PD	83	W
Single pulsed avalanche energy5)	EAS	240	mJ
MOSFET dv/dt ruggedness, VDS =0…480 V	dv/dt	50	V/ns
Reverse diode dv/dt, VDS =0…480 V, ISD≤ID	dv/dt	15	V/ns
Operation and storage temperature	Tstg , Tj	-55 to 150	°C

Thermal Characteristics

Parameter	Symbol	Value	Unit
Thermal resistance, junction-case	RθJC	1.5	°C/W
Thermal resistance, junction-ambient4)	RθJA	62	°C/W

Electrical Characteristics at Tj =25°C unless otherwise specified

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Drain-source breakdown voltage	BVDSS	800			V	VGS =0 V, ID =250 μA
Drain-source breakdown voltage	BVDSS	850	930		V	VGS =0 V, ID =250 μA, Tj =150 °C
Gate threshold voltage	VGS(th)	2.0		4.0	V	VDS =VGS , ID =250 μA
Drain-source on- state resistance	RDS(ON)		0.55	0.65	Ω	VGS =10 V, ID=4 A
Drain-source on- state resistance	RDS(ON)		1.48		Ω	VGS =10 V, ID=4 A, Tj =150 °C
Gate-source leakage current	IGSS			100	nA	VGS =30 V
Gate-source leakage current	IGSS			- 100	nA	VGS =-30 V
Drain-source leakage current	IDSS			10	μA	VDS =800 V, VGS =0 V

Note
1) Calculated continuous current based on maximum allowable junction temperature.
2) Repetitive rating; pulse width limited by max. junction temperature.
3) Pd is based on max. junction temperature, using junction-case thermal resistance.
4) The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
5) VDD=100 V, VGS =10 V, L=20 mH, starting Tj =25 °C.

Ordering Information

Package Type	Units/ Reel	Reels/ Inner Box	Units/ Inner Box	Inner Boxes/ Carton Box	Units/ Carton Box
TO252-C	2500	2	5000	5	25000