General Description
The GreenMOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.
The GreenMOS® Generic series is optimized for extreme switching performance to minimize switching loss. It is tailored for high power density applications to meet the highest efficiency standards.
Features
Low RDS(ON) & FOM
Extremely low switching loss
Excellent stability and uniformity
Applications
PC power
LED lighting
Telecom power
Server power
EV Charger
Solar/UPS
Key Performance Parameters
Parameter | Value | Unit |
VDS, min @ Tj(max) | 850 | V |
ID, pulse | 24 | A |
RDS(ON) , max @ VGS =10V | 650 | mΩ |
Qg | 12. 1 | nC |
Absolute Maximum Ratings at Tj =25°C unless otherwise noted
Parameter | Symbol | Value | Unit |
Drain-source voltage | VDS | 800 | V |
Gate-source voltage | VGS | ±30 | V |
Continuous drain current1) , TC=25 °C | ID | 8 | A |
Continuous drain current1) , TC=100 °C | 5 | ||
Pulsed drain current2) , TC=25 °C | ID, pulse | 24 | A |
Continuous diode forward current1) , TC=25 °C | IS | 8 | A |
Diode pulsed current2) , TC=25 °C | IS, pulse | 24 | A |
Power dissipation3) , TC=25 °C | PD | 83 | W |
Single pulsed avalanche energy5) | EAS | 240 | mJ |
MOSFET dv/dt ruggedness, VDS =0…480 V | dv/dt | 50 | V/ns |
Reverse diode dv/dt, VDS =0…480 V, ISD≤ID | dv/dt | 15 | V/ns |
Operation and storage temperature | Tstg , Tj | -55 to 150 | °C |
Thermal Characteristics
Parameter | Symbol | Value | Unit |
Thermal resistance, junction-case | RθJC | 1.5 | °C/W |
Thermal resistance, junction-ambient4) | RθJA | 62 | °C/W |
Electrical Characteristics at Tj =25°C unless otherwise specified
Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
Drain-source breakdown voltage | BVDSS | 800 | V | VGS =0 V, ID =250 μA | ||
850 | 930 | VGS =0 V, ID =250 μA, Tj =150 °C | ||||
Gate threshold voltage | VGS(th) | 2.0 | 4.0 | V | VDS =VGS , ID =250 μA | |
Drain-source on- state resistance | RDS(ON) | 0.55 | 0.65 | Ω | VGS =10 V, ID=4 A | |
1.48 | VGS =10 V, ID=4 A, Tj =150 °C | |||||
Gate-source leakage current | IGSS | 100 | nA | VGS =30 V | ||
- 100 | VGS =-30 V | |||||
Drain-source leakage current | IDSS | 10 | μA | VDS =800 V, VGS =0 V |
Note
1) Calculated continuous current based on maximum allowable junction temperature.
2) Repetitive rating; pulse width limited by max. junction temperature.
3) Pd is based on max. junction temperature, using junction-case thermal resistance.
4) The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
5) VDD=100 V, VGS =10 V, L=20 mH, starting Tj =25 °C.
Ordering Information
Package Type | Units/ Reel | Reels/ Inner Box | Units/ Inner Box | Inner Boxes/ Carton Box | Units/ Carton Box |
TO252-C | 2500 | 2 | 5000 | 5 | 25000 |
Product Information
Product | Package | Pb Free | RoHS | Halogen Free |
OSG80R650DF | TO252 | yes | yes | yes |
Supply Chain

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