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Sic Diode To247-4L Ost80n65h4ewf Vces-650V Pulse-320A Vce (sat) -1.45V Qg-168nc N-Channel Power IGBT

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Shanghai Winture Electric Co., Ltd.

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Shanghai, China
Joy Li (Ms.)

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Model NO.:

IGBT-SiC Diode TO247-4L OST80N65H4EWF

Certification:

RoHS, ISO

Shape:

Metal Porcelain Tube

Shielding Type:

Sharp Cutoff Shielding Tube

Cooling Method:

Air Cooled Tube

Function:

Switch Transistor

Working Frequency:

High Frequency

Structure:

Planar

Encapsulation Structure:

Chip Transistor

Power Level:

High Power

Material:

Silicon

Trademark:

Orientalsemi

Transport Package:

Carton

Specification:

35x30x37cm

Origin:

China

HS Code:

8541290000

Product Description

General Description
OST80N65H4EWF uses advanced Oriental-Semi's patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low VCE(sat), low gate charge, and excellent switching performance. This device is suitable for mid to high range switching frequency converters.

Features
     Advanced TGBTTM technology
     Excellent conduction and switching loss
     Excellent stability and uniformity
     Fast and soft antiparallel SiC diode

Applications
     Induction converters
     Uninterruptible power supplies

Key Performance Parameters

Parameter	Value	Unit
VCES, min @ 25 °C	650	V
Maximum junction temperature	175	°C
IC, pulse	320	A
VCE(sat), typ @ VGE=15 V	1.5	V
Qg	168	nC

Absolute Maximum Ratings at Tvj=25 °C unless otherwise noted

Parameter	Symbol	Value	Unit
Collector emitter voltage	VCES	650	V
Gate emitter voltage	VGES	±20	V
Transient gate emitter voltage, TP≤10 µs, D<0.01	VGES	±30	V
Continuous collector current1) , TC=25 °C	IC	114	A
Continuous collector current1) , TC=100 °C	IC	80	A
Pulsed collector current2) , TC=25 °C	IC, pulse	320	A
Diode forward current1) , TC=25 °C	IF	80	A
Diode forward current1) , TC=100 °C	IF	60	A
Diode pulsed current2) , TC=25 °C	IF, pulse	240	A
Power dissipation3) , TC=25 °C	PD	395	W
Power dissipation3) , TC=100 °C	PD	198	W
Operation and storage temperature	Tstg, Tvj	-55 to 175	°C
Short circuit withstand time VGE =15 V, VCC≤400 V Allowed number of short circuits<1000 Time between short circuits:≥1.0 S Tvj =150 °C	SC	5	μs

Thermal Characteristics

Parameter	Symbol	Value	Unit
IGBT thermal resistance, junction-case	RθJC	0.38	°C/W
Diode thermal resistance, junction-case	RθJC	0.65	°C/W
Thermal resistance, junction-ambient4)	RθJA	40	°C/W

Electrical Characteristics at Tvj=25 °C unless otherwise specified

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Collector-emitter breakdown voltage	V(BR)CES	650			V	VGE =0 V, IC =0.5 mA
Collector-emitter saturation voltage	VCE(sat)		1.5	1.8	V	VGE =15 V, IC=80 A Tvj=25 °C
			1.7		V	VGE =15 V, IC=80 A, Tvj=125 °C
			1.85			VGE =15 V, IC=80 A, Tvj=175 °C
Gate-emitter threshold voltage	VGE(th)	3.5	4.5	5.5	V	VCE =VGE , ID =0.5 mA
Diode forward voltage	VF		2.2		V	VGE =0 V, IF =40 A Tvj=25 °C
			2.8			VGE =0 V, IF =40 A, Tvj=125 °C
			3.4			VGE =0 V, IF =40 A, Tvj=175 °C
Gate-emitter leakage current	IGES			100	nA	VCE =0 V, VGE=20 V
Zero gate voltage collector current	ICES			50	μA	VCE =650 V, VGE =0 V

Gate Charge Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Total gate charge	Qg		168		nC	VGE =15 V, VCC=520 V, IC=80 A
Gate-emitter charge	Qge		74		nC
Gate-collector charge	Qgc		30		nC

Body Diode Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Diode reverse recovery time	trr		41		ns	VR=400 V, IF=80 A, diF/dt=500 A/μs
Diode reverse recovery charge	Qrr		141		nC
Diode peak reverse recovery current	Irrm		7		A

Note
1) Calculated continuous current based on maximum allowable junction temperature.
2) Repetitive rating; pulse width limited by max. junction temperature.
3) Pd is based on max. junction temperature, using junction-case thermal resistance.

Ordering Information

Package Type	Units/ Tube	Tubes/ Inner Box	Units/ Inner Box	Inner Boxes/ Carton Box	Units/ Carton Box
TO247-4L-S	30	15	450	4	1800