Vds-650V ID-108A RDS (ON) -99ohm N-Channel Power Mosfet

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Shanghai Winture Electric Co., Ltd.

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TO263 OSG60R099KSZF
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Product Description
Product Description

General Description
The GreenMOS®  high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge.  It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.
The GreenMOS® Z series is integrated with fast recovery diode (FRD) to minimize reverse recovery time. It is suitable for resonant switching topologies to reach higher efficiency, higher reliability and smaller form factor.


Features
O Low RDS(ON) & FOM
O Extremely low switching loss
O Excellent stability and uniformity
O Ultra-fast and robust body diode


Applications
O PC power
O Telecom power
O Server power
O EV Charger
O Motor driver


Key Performance Parameters

ParameterValueUnit
VDS, min @ Tj(max)650V
ID, pulse108A
RDS(ON), max @ VGS =10V99mΩ
Qg66.8nC



Absolute Maximum Ratings at Tj =25°C unless otherwise noted

ParameterSymbolValueUnit
Drain-source voltageVDS600V
Gate-source voltageVGS±30V
Continuous drain current1) , TC=25 °C
ID
36
A
Continuous drain current1) , TC=100 °C22.8
Pulsed drain current2) , TC=25 °CID, pulse108A
Continuous diode forward current1) , TC=25 °CIS36A
Diode pulsed current2) , TC=25 °CIS, pulse108A
Power dissipation3) , TC=25 °CPD278W
Single pulsed avalanche energy5)EAS1000mJ
MOSFET dv/dt ruggedness, VDS =0…480 Vdv/dt50V/ns
Reverse diode dv/dt, VDS =0…480 V, ISDIDdv/dt50V/ns
Operation and storage temperatureTstg , Tj-55 to 150°C



Thermal Characteristics
ParameterSymbolValueUnit
Thermal resistance, junction-caseRθJC0.45°C/W
Thermal resistance, junction-ambient4)RθJA62°C/W



Electrical Characteristics at Tj =25°C unless otherwise specified

ParameterSymbolMin.Typ.Max.UnitTest condition
Drain-source         breakdown voltage
BVDSS
600  
V
VGS =0 V, ID =1 mA
650  VGS =0 V, ID =1 mA,
Tj =150 °C
Gate threshold
voltage
VGS(th)3.0 4.5VVDS =VGS , ID =1 mA
Drain-source on- state resistance
RDS(ON)
 0.0820.099
Ω
VGS =10 V, ID=18 A
 0.20 VGS =10 V, ID=18 A,
Tj =150 °C
Gate-source
leakage current

IGSS
  100
nA
VGS =30 V
  - 100VGS =-30 V
Drain-source
leakage current
IDSS  10AVDS =600 V, VGS =0 V
Gate resistanceRG 8 Ωƒ=1 MHz /  Open drain


 

Dynamic Characteristics
 
ParameterSymbolMin.Typ.Max.UnitTest condition
Input capacitanceCiss 3917.5 pFVGS =0 V,
VDS =50 V,
ƒ=100 KHz
Output capacitanceCoss 203.3 pF
Reverse transfer capacitanceCrss 9.0 pF
Turn-on delay timetd(on) 48.3 ns
VGS =10 V,
VDS =400 V,
RG=2 Ω,
ID=20 A
Rise timetr 77.0 ns
Turn-off delay timetd(off) 90.9 ns
Fall timetf 4.6 ns



Gate Charge Characteristics
ParameterSymbolMin.Typ.Max.UnitTest condition
Total gate chargeQg 66.8 nC
VGS =10 V,
VDS =400 V,
ID=20 A
Gate-source chargeQgs 16.6 nC
Gate-drain chargeQgd 28.7 nC
Gate plateau voltageVplateau 6.7 V



Body Diode Characteristics
ParameterSymbolMin.Typ.Max.UnitTest condition
Diode forward voltageVSD  1.4VIS=36 A,
VGS =0 V
Reverse recovery timetrr 146.5 ns
IS=20 A,
di/dt=100 As
Reverse recovery chargeQrr 1.0 C
Peak reverse recovery currentIrrm 12.8 A


Note
1)    Calculated continuous current based on maximum allowable junction temperature.
2)    Repetitive rating; pulse width limited by max. junction temperature.
3)    Pd is based on max. junction temperature, using junction-case thermal resistance .
4)   The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
5)    VDD=100 V, VGS =10 V, L=60 mH, starting Tj =25 °C.

 

Ordering Information
 
Package
Type
Units/
Reel
Reels /
Inner Box
Units/   Inner BoxInner Boxes/ Carton BoxUnits/     Carton Box
TO263-J8001800108000



Product Information
ProductPackagePb FreeRoHSHalogen Free
OSG60R099KSZFTO263yesyesyes


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