Audited Supplier
TO263 SFG130N10KF
RoHS, ISO
ST
Remote Cut-Off Shielding Tube
Air Cooled Tube
Switch Transistor
High Frequency
Planar
Chip Transistor
High Power
Silicon
Orientalsemi
Carton
35x30x37cm
China
8541290000
Product Description
General Description
SFGMOS® MOSFET is based on Oriental Semiconductor's unique device design to achieve low RDS(ON) , low gate charge, fast switching and excellent avalanche characteristics. The high Vth series is specially optimized for high systems with gate driving voltage greater than 10V.
FeaturesLow RDS(ON) & FOM
Extremely low switching loss
Excellent stability and uniformity
Fast switching and soft recovery
Applications
Switched mode power supply
Motor driver
Battery protection
DC-DC convertor
Solar inverter
UPS and energy inverter
Key Performance Parameters
Absolute Maximum Ratings at Tj =25°C unless otherwise noted
Electrical Characteristics at Tj =25°C unless otherwise specified
Gate Charge Characteristics
| Parameter | Value | Unit |
| VDS, min @ Tj(max) | 100 | V |
| ID, pulse | 390 | A |
| RDS(ON), max @ VGS =10V | 4.6 | mΩ |
| Qg | 101.6 | nC |
Absolute Maximum Ratings at Tj =25°C unless otherwise noted
| Parameter | Symbol | Value | Unit |
| Drain source voltage | VDS | 100 | V |
| Gate source voltage | VGS | ±20 | V |
| Continuous drain current1) , TC=25 °C | ID | 130 | A |
| Pulsed drain current2) , TC=25 °C | ID, pulse | 390 | A |
| Continuous diode forward current1) , TC=25 °C | IS | 130 | A |
| Diode pulsed current2) , TC=25 °C | IS, pulse | 390 | A |
| Power dissipation3) , TC=25 °C | PD | 192 | W |
| Single pulsed avalanche energy5) | EAS | 235 | mJ |
| Operation and storage temperature | Tstg ,Tj | -55 to 150 | °C |
Electrical Characteristics at Tj =25°C unless otherwise specified
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Drain-source breakdown voltage | BVDSS | 100 | V | VGS =0 V, ID =250 pA | ||
| Gate threshold voltage | VGS(th) | 2.0 | 4.0 | V | VDS =VGS , ID =250 pA | |
| Drain-source on-state resistance | RDS(ON) | 4.0 | 4.6 | mQ | VGS =10 V, ID=20 A | |
| Gate-source leakage current | IGSS | 100 | nA | VGS =20 V | ||
| - 100 | VGS =-20 V | |||||
| Drain-source leakage current | IDSS | 1 | pA | VDS =100 V, VGS =0 V |
Gate Charge Characteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Total gate charge | Qg | 101.6 | nC | VGS =10 V, VDS =50 V, ID=22 A | ||
| Gate-source charge | Qgs | 20.6 | nC | |||
| Gate-drain charge | Qgd | 28.7 | nC | |||
| Gate plateau voltage | Vplateau | 4.2 | V |
Note
1) Calculated continuous current based on maximum allowable junction temperature.
2) Repetitive rating; pulse width limited by max. junction temperature.
3) Pd is based on max. junction temperature, using junction-case thermal resistance.
4) The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
5) VDD=50 V,VGS=10 V, L=0.3 mH, starting Tj =25 °C.
Ordering Information
| Package Type | Units/ Reel | Reels / Inner Box | Units/ Inner Box | Inner Boxes/ Carton Box | Units/ Carton Box |
| TO263-C | 800 | 1 | 800 | 5 | 4000 |
| TO263-J | 800 | 1 | 800 | 10 | 8000 |
Product Information
| Product | Package | Pb Free | RoHS | Halogen Free |
| SFG130N10KF | TO263 | yes | yes | yes |
Supply Chain
Green Product Declaration
