MadeInChina.com > Electrical & Electronics > Electronic Tube & Transistor > Other Electronic Tubes & Transistors

Pdfn5*6 Sfs06r011ugf Vds-60 ID-8 00A RDS (ON) -1.5milliohm Qg-98.3nc N-Channel Power Mosfet

Price	$0.60 Compare
Min Order	5000 Pieces
Availability	In Stock
Shipping From	Shanghai, China
Popularity	486 people viewed
Quantity	+-

Shanghai Winture Electric Co., Ltd.

Audited Supplier 4 years

Profile Certified by SGS/BV

Shanghai, China
Joy Li (Ms.)

Visit Homepage Product Catalog

Product Detail
Contact Supplier

Model NO.:

Pdfn5*6 SFS06R011UGF

Certification:

RoHS, ISO

Shape:

Subminiature

Shielding Type:

Sharp Cutoff Shielding Tube

Cooling Method:

Air Cooled Tube

Function:

Switch Transistor

Working Frequency:

High Frequency

Structure:

Planar

Encapsulation Structure:

Chip Transistor

Power Level:

High Power

Material:

Silicon

Trademark:

Orientalsemi

Transport Package:

Carton

Specification:

35x30x37cm

Origin:

China

HS Code:

8541290000

Product Description

General Description
FSMOS® MOSFET is based on Oriental Semiconductor's unique device design to achieve low RDS(ON) , low gate charge, fast switching and excellent avalanche characteristics. The low Vth series is specially optimized for synchronous rectification systems with low driving voltage.

Features
     Low RDS(ON) & FOM
     Extremely low switching loss
     Excellent reliability and uniformity
     Fast switching and soft recovery

Applications
     PD charger
     Motor driver
     Switching voltage regulator
     DC-DC convertor
     Switching mode power supply

Key Performance Parameters

Parameter	Value	Unit
VDS	60	V
ID, pulse	800	A
RDS(ON), max @ VGS =10V	1.5	mΩ
Qg	98.3	nC

Absolute Maximum Ratings at Tj =25°C unless otherwise noted

Parameter	Symbol	Value	Unit
Drain-source voltage	VDS	60	V
Gate-source voltage	VGS	±20	V
Continuous drain current1) , TC=25 °C	ID	200	A
Pulsed drain current2) , TC=25 °C	ID, pulse	800	A
Continuous diode forward current1) , TC=25 °C	IS	200	A
Diode pulsed current2) , TC=25 °C	IS, pulse	800	A
Power dissipation3), TC=25 °C	PD	170	W
Single pulsed avalanche energy5)	EAS	208	mJ
Operation and storage temperature	Tstg , Tj	-55 to 150	°C

Electrical Characteristics at Tj =25°C unless otherwise specified

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Drain-source breakdown voltage	BVDSS	60			V	VGS =0 V, ID =250 μA
Gate threshold voltage	VGS(th)	1.3		2.3	V	VDS =VGS , ID =250 μA
Drain-source on-state resistance	RDS(ON)		1.3	1.5	mΩ	VGS =10 V, ID=30 A
Drain-source on-state resistance	RDS(ON)		1.8	2.1	mΩ	VGS =4.5 V, ID=30 A
Gate-source leakage current	IGSS			100	nA	VGS =20 V
Gate-source leakage current	IGSS			- 100	nA	VGS =-20 V
Drain-source leakage current	IDSS			1	μA	VDS =60 V, VGS =0 V
Gate resistance	RG		2.3		Ω	ƒ=1 MHz, Open drain

Ordering Information

Package Type	Units/ Reel	Reels/ Inner Box	Units/ Inner Box	Inner Boxes/ Carton Box	Units/ Carton Box
PDFN5×6-S	5000	1	5000	10	50000