Audited Supplier
Pdfn5*6 SFS06R011UGF
RoHS, ISO
Subminiature
Sharp Cutoff Shielding Tube
Air Cooled Tube
Switch Transistor
High Frequency
Planar
Chip Transistor
High Power
Silicon
Orientalsemi
Carton
35x30x37cm
China
8541290000
Product Description
General Description
FSMOS® MOSFET is based on Oriental Semiconductor's unique device design to achieve low RDS(ON) , low gate charge, fast switching and excellent avalanche characteristics. The low Vth series is specially optimized for synchronous rectification systems with low driving voltage.
Features
Low RDS(ON) & FOM
Extremely low switching loss
Excellent reliability and uniformity
Fast switching and soft recovery
Applications
PD charger
Motor driver
Switching voltage regulator
DC-DC convertor
Switching mode power supply
Key Performance Parameters
| Parameter | Value | Unit |
| VDS | 60 | V |
| ID, pulse | 800 | A |
| RDS(ON), max @ VGS =10V | 1.5 | mΩ |
| Qg | 98.3 | nC |
Absolute Maximum Ratings at Tj =25°C unless otherwise noted
| Parameter | Symbol | Value | Unit |
| Drain-source voltage | VDS | 60 | V |
| Gate-source voltage | VGS | ±20 | V |
| Continuous drain current1) , TC=25 °C | ID | 200 | A |
| Pulsed drain current2) , TC=25 °C | ID, pulse | 800 | A |
| Continuous diode forward current1) , TC=25 °C | IS | 200 | A |
| Diode pulsed current2) , TC=25 °C | IS, pulse | 800 | A |
| Power dissipation3), TC=25 °C | PD | 170 | W |
| Single pulsed avalanche energy5) | EAS | 208 | mJ |
| Operation and storage temperature | Tstg , Tj | -55 to 150 | °C |
Electrical Characteristics at Tj =25°C unless otherwise specified
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Drain-source breakdown voltage | BVDSS | 60 | V | VGS =0 V, ID =250 μA | ||
| Gate threshold voltage | VGS(th) | 1.3 | 2.3 | V | VDS =VGS , ID =250 μA | |
| Drain-source on-state resistance | RDS(ON) | 1.3 | 1.5 | mΩ | VGS =10 V, ID=30 A | |
| Drain-source on-state resistance | RDS(ON) | 1.8 | 2.1 | mΩ | VGS =4.5 V, ID=30 A | |
| Gate-source leakage current | IGSS | 100 | nA | VGS =20 V | ||
| - 100 | VGS =-20 V | |||||
| Drain-source leakage current | IDSS | 1 | μA | VDS =60 V, VGS =0 V | ||
| Gate resistance | RG | 2.3 | Ω | ƒ=1 MHz, Open drain |
Ordering Information
| Package Type | Units/ Reel | Reels/ Inner Box | Units/ Inner Box | Inner Boxes/ Carton Box | Units/ Carton Box |
| PDFN5×6-S | 5000 | 1 | 5000 | 10 | 50000 |
Product Information
| Product | Package | Pb Free | RoHS | Halogen Free |
| SFS06R011UGF | PDFN5×6 | yes | yes | yes |
Supply Chain
Green Product Declaration
