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To247-4L Ost50n65h4ewf Vces-650V Maximum Junction Temperature175 Pulse-200A Vce (sat) -1.4V Qg-104nc IGBT

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Shanghai Winture Electric Co., Ltd.

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Shanghai, China
Joy Li (Ms.)

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Model NO.:

cIGBT-Sic Diode TO247-4L OST50N65H4EWF

Certification:

RoHS, ISO

Shape:

GT

Shielding Type:

Remote Cut-Off Shielding Tube

Cooling Method:

Air Cooled Tube

Function:

Switch Transistor

Working Frequency:

High Frequency

Structure:

Planar

Encapsulation Structure:

Chip Transistor

Power Level:

High Power

Material:

Silicon

Trademark:

Orientalsemi

Origin:

China

HS Code:

8541290000

Product Description

General Description
OST50N65H4EWF uses advanced Oriental-Semi's patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low VCE(sat), low gate charge, and excellent switching performance. This device is suitable for mid to high range switching frequency converters.

Features
     Advanced TGBTTM technology
     Excellent conduction and switching loss
     Excellent stability and uniformity
     Fast and soft antiparallel SiC diode

Applications
     Induction converters
     Uninterruptible power supplies

Key Performance Parameters

Parameter	Value	Unit
VCES, min @ 25 °C	650	V
Maximum junction temperature	175	°C
IC, pulse	200	A
VCE(sat), typ @ VGE=15 V	1.4	V
Qg	104	nC

Absolute Maximum Ratings at Tvj=25 °C unless otherwise noted

Parameter	Symbol	Value	Unit
Collector emitter voltage	VCES	650	V
Gate emitter voltage	VGES	±20	V
Transient gate emitter voltage, TP≤10 µs, D<0.01	VGES	±30	V
Continuous collector current1) , TC=25 °C	IC	80	A
Continuous collector current1) , TC=100 °C	IC	50	A
Pulsed collector current2) , TC=25 °C	IC, pulse	200	A
Diode forward current1) , TC=25 °C	IF	30	A
Diode forward current1) , TC=100 °C	IF	20	A
Diode pulsed current2) , TC=25 °C	IF, pulse	200	A
Power dissipation3) , TC=25 °C	PD	375	W
Power dissipation3) , TC=100 °C	PD	150	W
Operation and storage temperature	Tstg, Tvj	-55 to 175	°C
Short circuit withstand time VGE =15 V, VCC≤400 V Allowed number of short circuits<1000 Time between short circuits:≥1.0 S Tvj =150 °C	SC	5	μs

Thermal Characteristics

Parameter	Symbol	Value	Unit
IGBT thermal resistance, junction-case	RθJC	0.4	°C/W
Diode thermal resistance, junction-case	RθJC	1.29	°C/W
Thermal resistance, junction-ambient4)	RθJA	40	°C/W

Dynamic Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Input capacitance	Cies		5853		pF	VGE=0 V, VCE =25 V, ƒ=100 kHz
Output capacitance	Coes		194		pF
Reverse transfer capacitance	Cres		5		pF
Turn-on delay time	td(on)		60		ns	VGE=15 V, VCC=400 V, RG=10 Ω, IC=50 A
Rise time	tr		88		ns
Turn-off delay time	td(off)		140		ns
Fall time	tf		60		ns
Turn-on energy	Eon		1.3		mJ
Turn-off energy	Eoff		0.56		mJ
Turn-on delay time	td(on)		56		ns	VGE=15 V, VCC=400 V, RG=10 Ω, IC=25 A
Rise time	tr		43		ns
Turn-off delay time	td(off)		166		ns
Fall time	tf		48		ns
Turn-on energy	Eon		0.34		mJ
Turn-off energy	Eoff		0.26		mJ

Gate Charge Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Total gate charge	Qg		104		nC	VGE =15 V, VCC=520 V, IC=50 A
Gate-emitter charge	Qge		47		nC
Gate-collector charge	Qgc		14		nC

Body Diode Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Diode reverse recovery time	trr		26		ns	VR=400 V, IF=50 A, diF/dt=500 A/μs Tvj =25 °C
Diode reverse recovery charge	Qrr		63		nC
Diode peak reverse recovery current	Irrm		4.4		A

Note
1) Calculated continuous current based on maximum allowable junction temperature.
2) Repetitive rating; pulse width limited by max. junction temperature.
3) Pd is based on max. junction temperature, using junction-case thermal resistance.
4) The value of RθJA is measured with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.

Ordering Information

Package Type	Units/ Tube	Tubes/ Inner Box	Units/ Inner Box	Inner Boxes/ Carton Box	Units/ Carton Box
TO247-4L-S	30	15	450	4	1800