Audited Supplier
OSG80R300JF
Solar Cell
2024+
Integrated Circuits Device
Compound Semiconductor
Osg80r300jf
QFP/PFP
Analog Digital Composite and Function
N-Type Semiconductor
EV Charger
LED Lighting
Telecom Power
Solar/UPS
Sever Power
PC Power
Orientalsemi
Orientalsemi
Air
China
8541290000
Product Description
General Description
The high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The Generic series is optimized for extreme switching performance to minimize switching loss. It is tailored for high power density applications to meet the highest efficiency standards.
Features
Low RDS(ON) & FOM
Extremely low switching loss
Excellent stability and uniformity
Applications
LED lighting
Telecom Power
Solar/UPS
Sever power
PC power
EV Charger
Key Performance Parameters
| Parameter | Value | Unit |
| VDS, min @ Tj(max) | 850 | V |
| ID, pulse | 45 | A |
| RDS(ON) , max @ VGS=10V | 300 | mΩ |
| Qg | 23.3 | nC |
Marking Information
| Product Name | Package | Marking |
| OSG80R300JF | PDFN 8×8 | OSG80R300J |
Package & Pin Information
Absolute Maximum Ratings at Tj=25°C unless otherwise noted
Thermal Characteristics
Electrical Characteristics at Tj=25°C unless otherwise specified
| Parameter | Symbol | Value | Unit |
| Drain-source voltage | VDS | 800 | V |
| Gate-source voltage | VGS | ±30 | V |
| Continuous drain current1) , TC=25 °C | ID | 15 | A |
| Continuous drain current1) , TC=100 °C | 9.5 | ||
| Pulsed drain current2) , TC=25 °C | ID, pulse | 45 | A |
| Continuous diode forward current1) , TC=25 °C | IS | 15 | A |
| Diode pulsed current2) , TC=25 °C | IS, pulse | 45 | A |
| Power dissipation3) , TC=25 °C | PD | 151 | W |
| Single pulsed avalanche energy5) | EAS | 360 | mJ |
| MOSFET dv/dt ruggedness, VDS=0…480 V | dv/dt | 50 | V/ns |
| Reverse diode dv/dt, VDS=0…480 V, ISD≤ID | dv/dt | 15 | V/ns |
| Operation and storage temperature | Tstg, Tj | -55 to 150 | °C |
Thermal Characteristics
| Parameter | Symbol | Value | Unit |
| Thermal resistance, junction-case | RθJC | 0.83 | °C/W |
| Thermal resistance, junction-ambient4) | RθJA | 62 | °C/W |
Electrical Characteristics at Tj=25°C unless otherwise specified
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Drain-source breakdown voltage | BVDSS | 800 | V | VGS=0 V, ID=250 μA | ||
| 850 | VGS=0 V, ID=250 μA, Tj=150 °C | |||||
| Gate threshold voltage | VGS(th) | 2.9 | 3.9 | V | VDS=VGS , ID=250 μA | |
| Drain-source on- state resistance | RDS(ON) | 0.24 | 0.3 | Ω | VGS=10 V, ID=7.5 A | |
| 0.64 | VGS=10 V, ID=7.5 A, Tj=150 °C | |||||
| Gate-source leakage current | IGSS | 100 | nA | VGS=30 V | ||
| - 100 | VGS=-30 V | |||||
| Drain-source leakage current | IDSS | 5 | μA | VDS=800 V, VGS=0 V | ||
| Gate resistance | RG | 18.2 | Ω | ƒ=1 MHz, Open drain |
Dynamic Characteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Input capacitance | Ciss | 1552 | pF | VGS=0 V, VDS=50 V, ƒ=100 kHz | ||
| Output capacitance | Coss | 80.1 | pF | |||
| Reverse transfer capacitance | Crss | 2.1 | pF | |||
| Turn-on delay time | td(on) | 33.6 | ns | VGS=10 V, VDS=400 V, RG=2 Ω, ID=7.5 A | ||
| Rise time | tr | 20.3 | ns | |||
| Turn-off delay time | td(off) | 57.9 | ns | |||
| Fall time | tf | 4.5 | ns |
Gate Charge Characteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Total gate charge | Qg | 22.7 | nC | VGS=10 V, VDS=400 V, ID=7.5 A | ||
| Gate-source charge | Qgs | 8.6 | nC | |||
| Gate-drain charge | Qgd | 2.3 | nC | |||
| Gate plateau voltage | Vplateau | 5.5 | V |
Body Diode Characteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Diode forward voltage | VSD | 1.3 | V | IS=15 A, VGS=0 V | ||
| Reverse recovery time | trr | 313.7 | ns | VR =400 V, IS=7.5 A, di/dt=100 A/μs | ||
| Reverse recovery charge | Qrr | 4.2 | μC | |||
| Peak reverse recovery current | Irrm | 25.2 | A |
Note
1) Calculated continuous current based on maximum allowable junction temperature. 2) Repetitive rating; pulse width limited by max. junction temperature.
3) Pd is based on max. junction temperature, using junction-case thermal resistance.
4) The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
5) VDD=100 V, VGS=10 V, L=80 mH, starting Tj=25 °
Supply Chain
Green Product Declaration
