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Insulated Gate Bipolar Transistor IGBT G30n60d to-247

Price $1.50
Min Order 5000 Pieces
Availability In Stock
Shipping From Jiangsu, China
Popularity 256 people viewed
Model NO.:
G30N60D
Application:
Inverter Welding Machine, UPS
Batch Number:
2022
Manufacturing Technology:
Discrete Device
Material:
Silicon
Model:
G30n60d
Package:
to-247
Type:
N-Type Semiconductor
Brand:
Wxdh
Trademark:
WXDH
Transport Package:
Tube
Origin:
Wuxi, China
HS Code:
8541290000
Product Description
PARAMETERSYMBOLRATINGUNIT
 
Collector-Emitter VoltageVCES600V
Gate- Emitter VoltageVGES±20V
Collector CurrentIC(T=25ºC)60A
Collector Current (Tc=100ºC)30A
Pulsed Collector CurrentICM90A
Diode Continuous Forward CurrentI@TC = 100 °C20A
Diode Maximum Forward CurrentIFM100A
Total DissipationTC=25ºCPD250W
TC=100ºCPD100W
Junction TemperatureTj150ºC
storage TemperatureTstg-55~150ºC
 
Features
FS Trench Technology, Positive temperature coefficient
Low saturation voltage: VCE(sat), typ = 2.0V
@ IC =30A and VGE=15V
Mainly used in inverter welding machine, suitable for working frequency < 50kHz.
Applications
Inverter welding machine
Solar inverter
UPS
Medium and high switching frequency converter
 
Product Specifications and Packaging Models
Product ModelPackage TypeMark NameRoHSPackageQuantity
G30N60DTO-247G30N60DPb-freeTube300/box
 
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