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Mode N-Channel Power Mosfet Pdfn5*6 Sfg100n10GF Vds-100V ID-300A for Battery Protection DC-DC Convertor

Price Negotiable
Min Order 5000 Pieces
Availability In Stock
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Model NO.:
PDFN5*6 SFG100N10GF
Certification:
RoHS, ISO
Shape:
Metal Porcelain Tube
Shielding Type:
Sharp Cutoff Shielding Tube
Cooling Method:
Air Cooled Tube
Function:
Switch Transistor
Working Frequency:
High Frequency
Structure:
Planar
Encapsulation Structure:
Chip Transistor
Power Level:
High Power
Material:
Silicon
Trademark:
Orientalsemi
Transport Package:
Carton
Origin:
China
HS Code:
8541290000
Product Description

General Description
SFGMOS®  MOSFET is based on Oriental Semiconductor's unique device design to achieve low RDS(ON) , low gate charge, fast switching and excellent avalanche characteristics. The high Vth series is specially optimized for high systems with gate driving voltage greater than 10V.
 

Features
     Low RDS(ON) & FOM
     Extremely low switching loss
     Excellent stability and uniformity
     Fast switching and soft recovery


Applications
     Switched mode power supply
     Motor driver
     Battery protection
     DC-DC convertor
     Solar inverter
     UPS and energy inverter


Key Performance Parameters
ParameterValueUnit
VDS, min @ Tj(max)100V
ID, pulse300A
RDS(ON), max @ VGS =10V8mΩ
Qg55.6nC


Absolute Maximum Ratings at Tj =25°C unless otherwise noted
 
ParameterSymbolValueUnit
Drain source voltageVDS100V
Gate source voltageVGS±20V
Continuous drain current1) , TC=25 °CID100A
Pulsed drain current2) , TC=25 °CID, pulse300A
Continuous diode forward current1) , TC=25 °CIS100A
Diode pulsed current2) , TC=25 °CIS, pulse300A
Power dissipation3) , TC=25 °CPD148W
Single pulsed avalanche energy5)EAS130mJ
Operation and storage temperatureTstg ,Tj-55 to 150°C


Thermal Characteristics
ParameterSymbolValueUnit
Thermal resistance, junction-caseRθJC0.84°C/W
Thermal resistance, junction-ambient4)RθJA62°C/W


Electrical Characteristics at Tj =25°C unless otherwise specified
ParameterSymbolMin.Typ.Max.UnitTest condition
Drain-source         breakdown voltageBVDSS100  VVGS =0 V, ID =250 pA
Gate threshold
voltage		VGS(th)2.0 4.0VVDS =VGS , ID =250 pA
Drain-source
on-state resistance		RDS(ON) 6.58.0mQVGS =10 V, ID=12 A
Gate-source
leakage current
IGSS		  100
nA		VGS =20 V
  - 100VGS =-20 V
Drain-source
leakage current		IDSS  1pAVDS =100 V, VGS =0 V


Dynamic Characteristics
ParameterSymbolMin.Typ.Max.UnitTest condition
Input capacitanceCiss 3530 pF
VGS =0 V,
VDS =50 V,
ƒ=1 MHz
Output capacitanceCoss 560 pF
Reverse transfer capacitanceCrss 9 pF
Turn-on delay timetd(on) 22.5 ns
VGS =10 V,
VDS =50 V,
RG=2 Ω,
ID=10 A
Rise timetr 8.6 ns
Turn-off delay timetd(off) 66.6 ns
Fall timetf 42.1 ns

Note
1)   Calculated continuous current based on maximum allowable junction temperature.
2)   Repetitive rating; pulse width limited by max. junction temperature.
3)   Pd is based on max. junction temperature, using junction-case thermal resistance.
4)    The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
5)    VDD=50 V,VGS=10 V, L=0.3 mH, starting Tj =25 °C.


Ordering Information
Package
Type		Units/
Reel		Reels /   Inner BoxUnits/   Inner BoxInner Boxes/ Carton BoxUnits/     Carton Box
PDFN5*6-C5000210000550000
PDFN5*6-K5000210000550000


Product Information
ProductPackagePb FreeRoHSHalogen Free
SFG100N10GFPDFN5*6yesyesyes



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