General Description
SFGMOS® MOSFET is based on Oriental Semiconductor's unique device design to achieve low RDS(ON) , low gate charge, fast switching and excellent avalanche characteristics. The high Vth series is specially optimized for high systems with gate driving voltage greater than 10V.
FeaturesLow RDS(ON) & FOM
Extremely low switching loss
Excellent stability and uniformity
Fast switching and soft recovery
Applications
Switched mode power supply
Motor driver
Battery protection
DC-DC convertor
Solar inverter
UPS and energy inverter
Key Performance Parameters
Parameter | Value | Unit |
VDS, min @ Tj(max) | 100 | V |
ID, pulse | 300 | A |
RDS(ON), max @ VGS =10V | 8 | mΩ |
Qg | 55.6 | nC |
Absolute Maximum Ratings at Tj =25°C unless otherwise noted
Parameter | Symbol | Value | Unit |
Drain source voltage | VDS | 100 | V |
Gate source voltage | VGS | ±20 | V |
Continuous drain current1) , TC=25 °C | ID | 100 | A |
Pulsed drain current2) , TC=25 °C | ID, pulse | 300 | A |
Continuous diode forward current1) , TC=25 °C | IS | 100 | A |
Diode pulsed current2) , TC=25 °C | IS, pulse | 300 | A |
Power dissipation3) , TC=25 °C | PD | 148 | W |
Single pulsed avalanche energy5) | EAS | 130 | mJ |
Operation and storage temperature | Tstg ,Tj | -55 to 150 | °C |
Thermal Characteristics
Parameter | Symbol | Value | Unit |
Thermal resistance, junction-case | RθJC | 0.84 | °C/W |
Thermal resistance, junction-ambient4) | RθJA | 62 | °C/W |
Electrical Characteristics at Tj =25°C unless otherwise specified
Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
Drain-source breakdown voltage | BVDSS | 100 | V | VGS =0 V, ID =250 pA | ||
Gate threshold voltage | VGS(th) | 2.0 | 4.0 | V | VDS =VGS , ID =250 pA | |
Drain-source on-state resistance | RDS(ON) | 6.5 | 8.0 | mQ | VGS =10 V, ID=12 A | |
Gate-source leakage current | IGSS | 100 | nA | VGS =20 V | ||
- 100 | VGS =-20 V | |||||
Drain-source leakage current | IDSS | 1 | pA | VDS =100 V, VGS =0 V |
Dynamic Characteristics
Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
Input capacitance | Ciss | 3530 | pF | VGS =0 V, VDS =50 V, ƒ=1 MHz | ||
Output capacitance | Coss | 560 | pF | |||
Reverse transfer capacitance | Crss | 9 | pF | |||
Turn-on delay time | td(on) | 22.5 | ns | VGS =10 V, VDS =50 V, RG=2 Ω, ID=10 A | ||
Rise time | tr | 8.6 | ns | |||
Turn-off delay time | td(off) | 66.6 | ns | |||
Fall time | tf | 42.1 | ns |
Note
1) Calculated continuous current based on maximum allowable junction temperature.
2) Repetitive rating; pulse width limited by max. junction temperature.
3) Pd is based on max. junction temperature, using junction-case thermal resistance.
4) The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
5) VDD=50 V,VGS=10 V, L=0.3 mH, starting Tj =25 °C.
Ordering Information
Package Type | Units/ Reel | Reels / Inner Box | Units/ Inner Box | Inner Boxes/ Carton Box | Units/ Carton Box |
PDFN5*6-C | 5000 | 2 | 10000 | 5 | 50000 |
PDFN5*6-K | 5000 | 2 | 10000 | 5 | 50000 |
Product Information
Product | Package | Pb Free | RoHS | Halogen Free |
SFG100N10GF | PDFN5*6 | yes | yes | yes |
Supply Chain

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