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Pdfn5*6 Sfg10s08GF Vds-100V ID-210A Power Mosfet

Price $1.10
Min Order 5000 Pieces
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Model NO.:
PDFN5*6 SFG10S08GF
Certification:
RoHS, ISO
Shape:
Metal Porcelain Tube
Shielding Type:
Sharp Cutoff Shielding Tube
Cooling Method:
Air Cooled Tube
Function:
Switch Transistor
Working Frequency:
High Frequency
Structure:
Planar
Encapsulation Structure:
Chip Transistor
Power Level:
High Power
Material:
Silicon
Trademark:
Orientalsemi
Transport Package:
Carton
Specification:
35x30x37cm
Origin:
China
HS Code:
8541290000
Product Description

General Description

SFGMOS® MOSFET is based on Oriental Semiconductor's unique device design to achieve low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. The low Vth series is specially designed to use in synchronous rectification power systems with low driving voltage.
 

Features

  • Low RDS(ON) & FOM
  • Extremely low switching loss
  • Excellent reliability and uniformity
  • Fast switching and soft recovery
 

Applications

  • PD charger
  • Motor driver
  • Switching voltage regulator
  • DC-DC convertor
  • Switched mode power supply
 

Key Performance Parameters

 
ParameterValueUnit
VDS, min @ Tj(max)100V
ID, pulse210A
RDS(ON) max @ VGS=10V8mΩ
Qg49.9nC


Marking Information

 
Product NamePackageMarking
SFG10S08GFPDFN5*6SFG10S08G

 
Absolute Maximum Ratings at Tj=25°C unless otherwise noted
 
ParameterSymbolValueUnit
Drain source voltageVDS100V
Gate source voltageVGS±20V
Continuous drain current1), TC=25 °CID70A
Pulsed drain current2), TC=25 °CID, pulse210A
Continuous diode forward current1), TC=25 °CIS70A
Diode pulsed current2), TC=25 °CIS, Pulse210A
Power dissipation3), TC=25 °CPD100W
Single pulsed avalanche energy5)EAS100mJ
Operation and storage temperatureTstg,Tj-55 to 150°C
 

Thermal Characteristics

ParameterSymbolValueUnit
Thermal resistance, junction-caseRθJC1.25°C/W
Thermal resistance, junction-ambient4)RθJA62°C/W

Electrical Characteristics at Tj=25°C unless otherwise specified
ParameterSymbolMin.Typ.Max.UnitTest condition
Drain-source breakdown voltageBVDSS100  VVGS=0 V, ID=250 μA
Gate threshold voltageVGS(th)1.0 2.5VVDS=VGS, ID=250 μA
Drain-source
on-state resistance		RDS(ON) 78mΩVGS=10 V, ID=30 A
Drain-source
on-state resistance		RDS(ON) 810mΩVGS=4.5 V, ID=12 A
Gate-source leakage current
IGSS		  100
nA		VGS=20 V
  -100VGS=-20 V
Drain-source leakage currentIDSS  1μAVDS=100 V, VGS=0 V
Gate resistanceRG 5.2 Ωƒ=1 MHz, Open drain
 

Dynamic Characteristics

ParameterSymbolMin.Typ.Max.UnitTest condition
Input capacitanceCiss 2604 pF
VGS=0 V, VDS=50 V,
ƒ=1 MHz
Output capacitanceCoss 361 pF
Reverse transfer capacitanceCrss 6.5 pF
Turn-on delay timetd(on) 20.6 ns
VGS=10 V, VDS=50 V, RG=2.2 Ω, ID=25 A
Rise timetr 5 ns
Turn-off delay timetd(off) 51.8 ns
Fall timetf 9 ns


Gate Charge Characteristics
 
ParameterSymbolMin.Typ.Max.UnitTest condition
Total gate chargeQg 49.9 nC
VGS=10 V, VDS=50 V, ID=25 A
Gate-source chargeQgs 6.5 nC
Gate-drain chargeQgd 12.4 nC
Gate plateau voltageVplateau 3.4 V

Body Diode Characteristics
ParameterSymbolMin.Typ.Max.UnitTest condition
Diode forward voltageVSD  1.3VIS=30 A, VGS=0 V
Reverse recovery timetrr 60.4 ns
VR=50 V, IS=12 A,
di/dt=100 A/μs
Reverse recovery chargeQrr 106 nC
Peak reverse recovery currentIrrm 3 A

Note
  1. Calculated continuous current based on maximum allowable junction temperature.
  2. Repetitive rating; pulse width limited by max. junction temperature.
  3. Pd is based on max. junction temperature, using junction-case thermal resistance.
  4. The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
  5. VDD=30 V,VGS=10 V, L=0.3 mH, starting Tj=25 °C.

 
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