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Professional Manufacture Well-Designed New Custom Silicon Carbide Epitaxial Wafer

Price $460.00
Min Order 3 piece
Availability In Stock
Shipping From Zhejiang, China
Popularity 283 people viewed
Model NO.:
Silicon Carbide Epi Wafer
Epitaxial Layer Thickness:
Less Than 0.5%
Epitaxial Layer Carrier Concentration:
Less Than 1.5%
Bipolar Device Level:
N-Doped (N-Type) or Al-Doped (P-Type) Epitaxial Wa
Thick Film Epitaxial Wafer:
30~200um
Epitaxial Wafer Type:
Sbd-Level, Mosfet Level
Specification:
6Inch
Origin:
China
HS Code:
2804611900
Product Description
      We are constantly pursuing higher crystal quality and processing quality to better meet customer needs. We can currently supply 6-inch and 8-inch conductive products in batches.

     Power electronic devices are made by growing a silicon carbide epitaxial layer on a conductive silicon carbide substrate to produce a silicon carbide homoepitaxial wafer, which can be further made into power devices such as Schottky diodes, MOSFET, IGBT, etc., which are used in new energy vehicles, rail transportation, and high-power transmission and substation.
                                                                                       
FAQ

Q1: What's the way of shipping ?
A:  We accept DHL, Fedex, TNT, UPS, EMS, SF and etc.
Q2: How to pay?
A:  T/T, PayPal and etc..
Q3: What's the deliver time?
A:  For inventory: the delivery time is 10 workdays.   For customized products: the delivery time is 10to 25 workdays. According to the quantity.
Q4: Can I customize the products based on my need?
 A: Yes, we can customize the specifications according to your needs.
Q5: How to guarantee the quality of your products?
 A: Strict detection during production.Strict sampling inspection on products before shipment and intact product packaging ensured.
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