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1 Piece (MOQ)
Triode Itl5-1 for High Frequency Generator for Heating
Beijing Jenerator Electronic Co.,Ltd
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Sic Diode To247 Ost75n65hswf Vces-650V Maximum Junction Temperature175, N-Channel Power IGBT
| Price | $1.60 |
|---|---|
| Min Order | 330 Pieces |
| Availability | In Stock |
| Shipping From | Shanghai, China |
| Popularity | 381 people viewed |
Model NO.:
IGBT-Sic Diode To247 OST75N65HSWF
Certification:
RoHS, ISO
Shape:
Metal Porcelain Tube
Shielding Type:
Sharp Cutoff Shielding Tube
Cooling Method:
Air Cooled Tube
Function:
Switch Transistor
Working Frequency:
High Frequency
Structure:
Planar
Encapsulation Structure:
Chip Transistor
Power Level:
High Power
Material:
Silicon
Trademark:
Orientalsemi
Transport Package:
Carton
Specification:
35x30x37cm
Origin:
China
HS Code:
8541290000
Product Description
General Description
OST75N65HSWF uses advanced Oriental-Semi's patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low VCE(sat), low gate charge, and excellent switching performance. This device is suitable for mid to high range switching frequency converters.
Features
Advanced TGBTTM technology
Excellent conduction and switching loss
Excellent stability and uniformity
Fast and soft antiparallel SiC diode
Applications
Induction converters
Uninterruptible power supplies
Key Performance Parameters
| Parameter | Value | Unit |
| VCES, min @ 25°C | 650 | V |
| Maximum junction temperature | 175 | °C |
| IC, pulse | 300 | A |
| VCE(sat), typ @ VGE=15V | 1.5 | V |
| Qg | 204 | nC |
Absolute Maximum Ratings at Tvj=25°C unless otherwise noted
| Parameter | Symbol | Value | Unit |
| Collector emitter voltage | VCES | 650 | V |
| Gate emitter voltage | VGES | ±20 | V |
| Transient gate emitter voltage, TP≤10µs, D<0.01 | ±30 | V | |
| Continuous collector current1) , TC=25ºC | IC | 90 | A |
| Continuous collector current1) , TC=100ºC | 75 | A | |
| Pulsed collector current2) , TC=25ºC | IC, pulse | 300 | A |
| Diode forward current1) , TC=25ºC | IF | 90 | A |
| Diode forward current1) , TC=100ºC | 75 | A | |
| Diode pulsed current2) , TC=25ºC | IF, pulse | 300 | A |
| Power dissipation3) , TC=25ºC | PD | 395 | W |
| Power dissipation3) , TC=100ºC | 198 | W | |
| Operation and storage temperature | Tstg, Tvj | -55 to 175 | °C |
Thermal Characteristics
| Parameter | Symbol | Value | Unit |
| IGBT thermal resistance, junction-case | RθJC | 0.38 | °C/W |
| Diode thermal resistance, junction-case | RθJC | 0.65 | °C/W |
| Thermal resistance, junction-ambient4) | RθJA | 40 | °C/W |
Electrical Characteristics at Tvj =25°C unless otherwise specified
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Collector-emitter breakdown voltage | V(BR)CES | 650 | V | VGE =0 V, IC =0.5 mA | ||
Collector-emitter saturation voltage | VCE(sat) | 1.5 | 1.8 | V | VGE =15 V, IC=75 A Tvj=25°C | |
| 1.7 | V | VGE =15 V, IC=75 A, Tvj =125°C | ||||
| 1.8 | VGE =15 V, IC=75 A, Tvj =175°C | |||||
| Gate-emitter threshold voltage | VGE(th) | 3.0 | 4.0 | 5.0 | V | VCE =VGE , ID =0.5 mA |
Diode forward voltage | VF | 1.8 | 2.2 | V | VGE =0 V, IF =30 A Tvj =25°C | |
| 2.2 | VGE =0 V, IF =30 A, Tvj =125°C | |||||
| 2.3 | VGE =0 V, IF =30 A, Tvj =175°C | |||||
| Gate-emitter leakage current | IGES | 100 | nA | VCE =0 V, VGE=20 V | ||
| Zero gate voltage collector current | ICES | 10 | μA | VCE =650 V, VGE =0 V |
Gate Charge Characteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Total gate charge | Qg | 204 | nC | VGE =15 V, VCC=520 V, IC=75 A | ||
| Gate-emitter charge | Qge | 56 | nC | |||
| Gate-collector charge | Qgc | 67 | nC |
Body Diode Characteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Diode reverse recovery time | trr | 30 | ns | VR =400 V, IF=75 A, diF/dt=500 A/μs Tvj = 25°C | ||
| Diode reverse recovery charge | Qrr | 98 | nC | |||
| Diode peak reverse recovery current | Irrm | 5.8 | A |
Note
1) Calculated continuous current based on maximum allowable junction temperature.
2) Repetitive rating; pulse width limited by max. junction temperature.
3) Pd is based on max. junction temperature, using junction-case thermal resistance.
4) The value of RθJA is measured with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
Ordering Information
| Package Type | Units/ Tube | Tubes/ Inner Box | Units/ Inner Box | Inner Boxes/ Carton Box | Units/ Carton Box |
| TO247-P | 30 | 11 | 330 | 6 | 1980 |
Product Information
| Product | Package | Pb Free | RoHS | Halogen Free |
| OST75N65HSWF | TO247 | yes | yes | yes |
Green Product Declaration
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