$110.00
48 Pieces (MOQ)
Transmitting Tube Electronic 833A for Industrial Heating
Beijing Jenerator Electronic Co.,Ltd
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To247 Osg65r200hf Vds-700V ID-60A RDS (ON) -200milliohm Qg-24.8nc N-Channel Power Mosfet
| Price | $1.10 |
|---|---|
| Min Order | 600 Pieces |
| Availability | In Stock |
| Shipping From | Shanghai, China |
| Popularity | 299 people viewed |
Model NO.:
TO247 OSG65R200HF
Certification:
RoHS, ISO
Shape:
Metal Porcelain Tube
Shielding Type:
Sharp Cutoff Shielding Tube
Cooling Method:
Air Cooled Tube
Function:
Switch Transistor
Working Frequency:
High Frequency
Structure:
Planar
Encapsulation Structure:
Chip Transistor
Power Level:
High Power
Material:
Silicon
Trademark:
Orientalsemi
Transport Package:
Carton
Specification:
35x30x37cm
Origin:
China
HS Code:
8541290000
Product Description
General Description
The GreenMOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability .
The GreenMOS® Generic series is optimized for extreme switching performance to minimize switching loss . It is tailored for high power density applications to meet the highest efficiency standards .
Features
Low RDS(on) & FOM
Extremely low switching loss
Excellent stability and uniformity
Applications
PC power
LED lighting
Telecom power
Server power
EV Charger
Solar/UPS
Key Performance Parameters
| Parameter | Value | Unit |
| VDS, min @ Tj(max) | 700 | V |
| ID, pulse | 60 | A |
| RDS(ON) , max @ VGS=10V | 200 | mΩ |
| Qg | 24.8 | nC |
Absolute Maximum Ratings at Tj=25°C unless otherwise noted
| Parameter | Symbol | Value | Unit |
| Drain-source voltage | VDS | 650 | V |
| Gate-source voltage | VGS | ±30 | V |
| Continuous drain current1) , TC=25 °C | ID | 20 | A |
| Continuous drain current1) , TC=100 °C | 12.5 | ||
| Pulsed drain current2) , TC=25 °C | ID, pulse | 60 | A |
| Continuous diode forward current1) , TC=25 °C | IS | 20 | A |
| Diode pulsed current2) , TC=25 °C | IS, pulse | 60 | A |
| Power dissipation3) , TC=25 °C | PD | 151 | W |
| Single pulsed avalanche energy5) | EAS | 600 | mJ |
| MOSFET dv/dt ruggedness, VDS=0…480 V | dv/dt | 50 | V/ns |
| Reverse diode dv/dt, VDS=0…480 V, ISD≤ID | dv/dt | 15 | V/ns |
| Operation and storage temperature | Tstg , Tj | -55 to 150 | °C |
Thermal Characteristics
| Parameter | Symbol | Value | Unit |
| Thermal resistance, junction-case | RθJC | 0.82 | °C/W |
| Thermal resistance, junction-ambient4) | RθJA | 62 | °C/W |
Electrical Characteristics at Tj=25°C unless otherwise specified
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Drain-source breakdown voltage | BVDSS | 650 | V | VGS=0 V, ID=250 uA | ||
| 700 | 774 | VGS=0 V, ID=250 u A, Tj=150 °C | ||||
| Gate threshold voltage | VGS(th) | 2.0 | 4.0 | V | VDS=VGS, ID=250 u A | |
| Drain-source on- state resistance | RDS(ON) | 0.16 | 0.2 | Ω | VGS=10 V, ID=10 A | |
| 0.42 | VGS=10 V, ID=10 A, Tj=150 °C | |||||
| Gate-source leakage current | IGSS | 100 | nA | VGS=30 V | ||
| -100 | VGS=-30 V | |||||
| Drain-source leakage current | IDSS | 1 | μA | VDS=650 V, VGS=0 V |
Dynamic Characteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Input capacitance | Ciss | 1433 | pF | VGS=0 V, VDS=50 V, ƒ=100 kHz | ||
| Output capacitance | Coss | 92.5 | pF | |||
| Reverse transfer capacitance | Crss | 3.9 | pF | |||
| Turn-on delay time | td(on) | 40.1 | ns | VGS=10 V, VDS=520 V, RG=25 Ω, ID=20 A | ||
| Rise time | tr | 49.8 | ns | |||
| Turn-off delay time | td(off) | 57.3 | ns | |||
| Fall time | tf | 63.7 | ns |
Gate Charge Characteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Total gate charge | Qg | 24.8 | nC | VGS=10 V, VDS=520 V, ID=20 A | ||
| Gate-source charge | Qgs | 7.2 | nC | |||
| Gate-drain charge | Qgd | 8.2 | nC | |||
| Gate plateau voltage | Vplateau | 5.6 | V |
Note
1) Calculated continuous current based on maximum allowable junction temperature.
2) Repetitive rating; pulse width limited by max. junction temperature.
3) Pd is based on max. junction temperature, using junction-case thermal resistance.
4) The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
5) VDD=150 V, VGS=10 V, L=10.8 mH, starting Tj=25 °C.
Ordering Information
| Package Type | Units/ Tube | Tubes/ Inner Box | Units/ Inner Box | Inner Boxes/ Carton Box | Units/ Carton Box |
| TO247-J | 30 | 20 | 600 | 5 | 3000 |
| TO247-P | 30 | 11 | 330 | 6 | 1980 |
Product Information
| Product | Package | Pb Free | RoHS | Halogen Free |
| OSG65R200HF | TO247 | yes | yes | yes |
Supply Chain
Green Product Declaration
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