MadeInChina.com > Electrical & Electronics > Electronic Tube & Transistor > Other Electronic Tubes & Transistors

To247 Osg65r200hf Vds-700V ID-60A RDS (ON) -200milliohm Qg-24.8nc N-Channel Power Mosfet

Price	$1.10 Compare
Min Order	600 Pieces
Availability	In Stock
Shipping From	Shanghai, China
Popularity	298 people viewed
Quantity	+-

Shanghai Winture Electric Co., Ltd.

Audited Supplier 4 years

Profile Certified by SGS/BV

Shanghai, China
Joy Li (Ms.)

Visit Homepage Product Catalog

Product Detail
Contact Supplier

Model NO.:

TO247 OSG65R200HF

Certification:

RoHS, ISO

Shape:

Metal Porcelain Tube

Shielding Type:

Sharp Cutoff Shielding Tube

Cooling Method:

Air Cooled Tube

Function:

Switch Transistor

Working Frequency:

High Frequency

Structure:

Planar

Encapsulation Structure:

Chip Transistor

Power Level:

High Power

Material:

Silicon

Trademark:

Orientalsemi

Transport Package:

Carton

Specification:

35x30x37cm

Origin:

China

HS Code:

8541290000

Product Description

General Description
The GreenMOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability .
The GreenMOS® Generic series is optimized for extreme switching performance to minimize switching loss . It is tailored for high power density applications to meet the highest efficiency standards .

Features
     Low RDS(on) & FOM
     Extremely low switching loss
     Excellent stability and uniformity

Applications
     PC power
     LED lighting
     Telecom power
     Server power
     EV Charger
     Solar/UPS

Key Performance Parameters

Parameter	Value	Unit
VDS, min @ Tj(max)	700	V
ID, pulse	60	A
RDS(ON) , max @ VGS=10V	200	mΩ
Qg	24.8	nC

Absolute Maximum Ratings at Tj=25°C unless otherwise noted

Parameter	Symbol	Value	Unit
Drain-source voltage	VDS	650	V
Gate-source voltage	VGS	±30	V
Continuous drain current1) , TC=25 °C	ID	20	A
Continuous drain current1) , TC=100 °C	ID	12.5	A
Pulsed drain current2) , TC=25 °C	ID, pulse	60	A
Continuous diode forward current1) , TC=25 °C	IS	20	A
Diode pulsed current2) , TC=25 °C	IS, pulse	60	A
Power dissipation3) , TC=25 °C	PD	151	W
Single pulsed avalanche energy5)	EAS	600	mJ
MOSFET dv/dt ruggedness, VDS=0…480 V	dv/dt	50	V/ns
Reverse diode dv/dt, VDS=0…480 V, ISD≤ID	dv/dt	15	V/ns
Operation and storage temperature	Tstg , Tj	-55 to 150	°C

Thermal Characteristics

Parameter	Symbol	Value	Unit
Thermal resistance, junction-case	RθJC	0.82	°C/W
Thermal resistance, junction-ambient4)	RθJA	62	°C/W

Electrical Characteristics at Tj=25°C unless otherwise specified

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Drain-source breakdown voltage	BVDSS	650			V	VGS=0 V, ID=250 uA
Drain-source breakdown voltage	BVDSS	700	774		V	VGS=0 V, ID=250 u A, Tj=150 °C
Gate threshold voltage	VGS(th)	2.0		4.0	V	VDS=VGS, ID=250 u A
Drain-source on- state resistance	RDS(ON)		0.16	0.2	Ω	VGS=10 V, ID=10 A
Drain-source on- state resistance	RDS(ON)		0.42		Ω	VGS=10 V, ID=10 A, Tj=150 °C
Gate-source leakage current	IGSS			100	nA	VGS=30 V
Gate-source leakage current	IGSS			-100	nA	VGS=-30 V
Drain-source leakage current	IDSS			1	μA	VDS=650 V, VGS=0 V

Dynamic Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Input capacitance	Ciss		1433		pF	VGS=0 V, VDS=50 V, ƒ=100 kHz
Output capacitance	Coss		92.5		pF
Reverse transfer capacitance	Crss		3.9		pF
Turn-on delay time	td(on)		40.1		ns	VGS=10 V, VDS=520 V, RG=25 Ω, ID=20 A
Rise time	tr		49.8		ns
Turn-off delay time	td(off)		57.3		ns
Fall time	tf		63.7		ns

Gate Charge Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Total gate charge	Qg		24.8		nC	VGS=10 V, VDS=520 V, ID=20 A
Gate-source charge	Qgs		7.2		nC
Gate-drain charge	Qgd		8.2		nC
Gate plateau voltage	Vplateau		5.6		V

Note
1) Calculated continuous current based on maximum allowable junction temperature.
2) Repetitive rating; pulse width limited by max. junction temperature.
3) Pd is based on max. junction temperature, using junction-case thermal resistance.
4) The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
5) VDD=150 V, VGS=10 V, L=10.8 mH, starting Tj=25 °C.

Ordering Information

Package Type	Units/ Tube	Tubes/ Inner Box	Units/ Inner Box	Inner Boxes/ Carton Box	Units/ Carton Box
TO247-J	30	20	600	5	3000
TO247-P	30	11	330	6	1980