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New Original to-220f 7A 680V N-Channel Mosfet Transistor 7n65

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Jiangsu Zhongxin Semiconductor Co., Ltd.

Audited Supplier 8 years

Profile Certified by SGS/BV

Jiangsu, China
Mandy (Ms.)
General Manager

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Model NO.:

Mosfet

Certification:

RoHS, CE, ISO, CCC, SGS

Shape:

GT

Shielding Type:

Remote Cut-Off Shielding Tube

Cooling Method:

Naturally Cooled Tube

Function:

High Back Pressure Transistor, Microwave Transistor, Switch Transistor

Working Frequency:

High Frequency

Structure:

IGBT

Encapsulation Structure:

Chip Transistor

Power Level:

High Power

Material:

Silicon

Trademark:

ZG

Transport Package:

by Sea, Packing

Specification:

T0-247, T0-3P, T0-220, T0-220F, T0-263

Origin:

Auhui Province, China

HS Code:

8541100000

Product Description

Parameter	Symbol		Value	Unit
- Drain-Source Voltage	V_DSS		650	V
Continues Drain Current	I_D	Tc=25ºC	7*	A
		Tc=100ºC	4.0*
( 1) Plused Drain Current (note 1)	I_DM		25	A
Gate-to-Source Voltage	V_GS		±30	V
( 2) Single Pulsed Avalanche Energy (note 2)	E_AS		400	mJ
( 1) Avalanche Current (note 1)	I_AR		7.0	A
( 1) Repetitive Avalanche Energy (note 1)	E_AR		14.5	mJ
( 3) Peak Diode Recovery (note 3)	dv/dt		4.5	V/ns
Power Dissipation	P_D Tc=25ºC	TO-220/TO-262	147	W
		TO-220F	48
Power Dissipation Derating Factor	P_D(DF) Above 25ºC	TO-220/TO-262	1.18	W/ºC
		TO-220F	0.38
Operating and Storage Temperature Range	T_J,T_STG		150,-55~+150	ºC
Maximum Temperature for Soldering	T_L		300	ºC

ZG7N65 is an N-channel enhancement mode MOSFET, which is produced using Zhongxin Micro-electronics's proprietary. The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for higher efficiency and system miniaturization.

Parameter	Symbol		Max	Unit
Thermal Resistance,Junction to Case	Rth(j-c)	TO-220/TO-262	0.85	W
		TO-220F	2.6
Thermal Resistance,Junction to Ambient	Rth(j-A)	TO-220/TO-262	62.5	W/ºC
		TO-220F	62.5

Off-Characteristics
Parameter	Symbol	Tests Conditions	Min	Type	Max	Unit
- Drain-Source Breakdown Voltage	BV_DSS	I_D=250μA, V_GS=0V	650	-	-	V
Breakdown Voltage Temperature Coefficient	△BV_DSS/△T_J	I_D=250μA, referenced to 25ºC	-	0.7	-	V/ºC
Zero Gate Voltage Drain Current	I_DSS	V_DS=650V,V_GS=0V, T_C=25ºC	-	-	1	μA
Zero Gate Voltage Drain Current	I_DSS	V_DS=520V, T_C=125ºC	-	-	10	μA
Gate-body leakage current, forward	I_GSSF	V_DS=0V, V_GS =30V	-	-	100	nA
Gate-body leakage current, reverse	I_GSSR	V_DS=0V, V_GS = -30V	-	-	-100	nA

On-Characteristics
Parameter	Symbol	Tests Conditions	Min	Type	Max	Unit
Gate Threshold Voltage	V_GS(th)	V_DS = V_GS , I_D=250μA	2.0	-	4.0	V
Static Drain-Source On-Resistance	R_DS(ON)	V_GS=10V , I_D=3.5A	-	1.2	1.5	Ω
Forward Transconductance	g_fs	V_DS = 40V, I_D=3.5A(note4)	-	6.5	-	S

Dynamic Characteristics
Parameter	Symbol	Tests Conditions	Min	Type	Max	Unit
Input capacitance	C_iss	V_DS=25V, V_GS =0V, f=1.0MHZ	-	960	1890	pF
Output capacitance	C_oss		-	95	178	pF
Reverse transfer capacitance	C_rss		-	13	20	pF