MadeInChina.com > Electrical & Electronics > Electronic Tube & Transistor > Other Electronic Tubes & Transistors

Motor Driver Switched Mode Power Supply Vds-80V ID-840A RDS (ON) -2.6milliohm Qg-148.1nc Enhancemenn-Channel Mosfet To263 Sfg280n08kf Transistor

Price	$0.60 Compare
Min Order	800 Pieces
Availability	In Stock
Shipping From	Shanghai, China
Popularity	289 people viewed
Quantity	+-

Shanghai Winture Electric Co., Ltd.

Audited Supplier 3 years

Profile Certified by SGS/BV

Shanghai, China
Joy Li (Ms.)

Visit Homepage Product Catalog

Product Detail
Contact Supplier

Model NO.:

TO263 SFG280N08K

Certification:

RoHS, ISO

Shape:

ST

Shielding Type:

Remote Cut-Off Shielding Tube

Cooling Method:

Air Cooled Tube

Function:

Switch Transistor

Working Frequency:

High Frequency

Structure:

Planar

Encapsulation Structure:

Chip Transistor

Power Level:

High Power

Material:

Germanium

Trademark:

Orientalsemi

Transport Package:

Air

HS Code:

8541290000

Product Description

General Description
SFGMOS® MOSFET is based on Oriental Semiconductor's unique device design to achieve low RDS(ON) , low gate charge, fast switching and excellent avalanche characteristics. The high Vth series is specially optimized for high systems with gate driving voltage greater than 10V.

Features
     Low RDS(ON) & FOM
     Extremely low switching loss
     Excellent stability and uniformity
     Fast switching and soft recovery

Applications
     Switched mode power supply
     Motor driver
     Battery protection
     DC-DC convertor
     Solar inverter
     UPS and energy inverter

Key Performance Parameters

Parameter	Value	Unit
VDS, min @ Tj(max)	80	V
ID, pulse	840	A
RDS(ON), max @ VGS =10V	2.6	mΩ
Qg	148.1	nC

Absolute Maximum Ratings at Tj =25°C unless otherwise noted

Parameter	Symbol	Value	Unit
Drain source voltage	VDS	80	V
Gate source voltage	VGS	±20	V
Continuous drain current1) , TC=25 °C	ID	280	A
Pulsed drain current2) , TC=25 °C	ID, pulse	840	A
Continuous diode forward current1) , TC=25 °C	IS	280	A
Diode pulsed current2) , TC=25 °C	IS, pulse	840	A
Power dissipation3) , TC=25 °C	PD	375	W
Single pulsed avalanche energy5)	EAS	1000	mJ
Operation and storage temperature	Tstg ,Tj	-55 to 150	°C

Thermal Characteristics

Parameter	Symbol	Value	Unit
Thermal resistance, junction-case	RθJC	0.33	°C/W
Thermal resistance, junction-ambient4)	RθJA	62	°C/W

Electrical Characteristics at Tj =25°C unless otherwise specified

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Drain-source breakdown voltage	BVDSS	80			V	VGS =0 V, ID =250 pA
Gate threshold voltage	VGS(th)	2.0		4.0	V	VDS =VGS , ID =250 pA
Drain-source on-state resistance	RDS(ON)		2.4	2.6	mQ	VGS =10 V, ID=20 A
Gate-source leakage current	IGSS			100	nA	VGS =20 V
Gate-source leakage current	IGSS			- 100	nA	VGS =-20 V
Drain-source leakage current	IDSS			1	pA	VDS =80 V, VGS =0 V

Note
1) Calculated continuous current based on maximum allowable junction temperature.
2) Repetitive rating; pulse width limited by max. junction temperature.
3) Pd is based on max. junction temperature, using junction-case thermal resistance.
4) The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
5) VDD=50 V,VGS=10 V, L=0.3 mH, starting Tj =25 °C.

Ordering Information

Package Type	Units/ Reel	Reels / Inner Box	Units/ Inner Box	Inner Boxes/ Carton Box	Units/ Carton Box
TO263-C	800	1	800	5	4000