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Transistor Enhancement To252 Osg80r1K4df Vds-850V ID-12A RDS (ON) -1.4ohm Qg-7.5nc for LED Lighting PC Power Telecom Power N-Channel Power Mosfet
| Price | $1.10 |
|---|---|
| Min Order | 2500 Pieces |
| Availability | In Stock |
| Shipping From | Shanghai, China |
| Popularity | 496 people viewed |
Model NO.:
TO252 OSG80R1K4DF
Certification:
RoHS, ISO
Shape:
Metal Porcelain Tube
Shielding Type:
Sharp Cutoff Shielding Tube
Cooling Method:
Air Cooled Tube
Function:
Switch Transistor
Working Frequency:
High Frequency
Structure:
Planar
Encapsulation Structure:
Chip Transistor
Power Level:
High Power
Material:
Silicon
Trademark:
Orientalsemi
Origin:
China
HS Code:
8541290000
Product Description
General Description
The GreenMOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability .
The GreenMOS® Generic series is optimized for extreme switching performance to minimize switching loss . It is tailored for high power density applications to meet the highest efficiency standards .
Features
Low RDS(ON) & FOM
Extremely low switching loss
Excellent stability and uniformity
Applications
PC power
LED lighting
Telecom power
Server power
EV Charger
Solar/UPS
Key Performance Parameters
| Parameter | Value | Unit |
| VDS, min @ Tj(max) | 850 | V |
| ID, pulse | 12 | A |
| RDS(ON) , max @ VGS=10V | 1.4 | Ω |
| Qg | 7.5 | nC |
Absolute Maximum Ratings at Tj=25°C unless otherwise noted
| Parameter | Symbol | Value | Unit |
| Drain-source voltage | VDS | 800 | V |
| Gate-source voltage | VGS | ±30 | V |
| Continuous drain current1) , TC=25 °C | ID | 4 | A |
| Continuous drain current1) , TC=100 °C | 2.5 | ||
| Pulsed drain current2) , TC=25 °C | ID, pulse | 12 | A |
| Continuous diode forward current1) , TC=25 °C | IS | 4 | A |
| Diode pulsed current2) , TC=25 °C | IS, pulse | 12 | A |
| Power dissipation3) , TC=25 °C | PD | 37 | W |
| Single pulsed avalanche energy5) | EAS | 100 | mJ |
| MOSFET dv/dt ruggedness, VDS=0…640 V | dv/dt | 50 | V/ns |
| Reverse diode dv/dt, VDS=0…640 V, ISD≤ID | dv/dt | 15 | V/ns |
| Operation and storage temperature | Tstg , Tj | -55 to 150 | °C |
Ordering Information
| Package Type | Units/ Reel | Reels/ Inner Box | Units/ Inner Box | Inner Boxes/ Carton Box | Units/ Carton Box |
| TO252-J | 2500 | 2 | 5000 | 5 | 25000 |
| TO252-P | 2500 | 2 | 5000 | 5 | 25000 |
Product Information
| Product | Package | Pb Free | RoHS | Halogen Free |
| OSG80R1K4DF | TO252 | yes | yes | yes |
Supply Chain
Green Product Declaration
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