Ncep10n12K Nce N-Channel Super Trench II Power Mosfet
SHENZHEN HEYLOO ELECTRONIC TECHNOLOGY CO., LTD
100A/1200V IGBT for The Inverter and Motor Control Drives Legm100be120L5h
Leading Energy (Beijing)Electronic Technology Co., Ltd.
650V 75A Nce65TF041t N-Channel Super Junction Power Mosfet
SHENZHEN HEYLOO ELECTRONIC TECHNOLOGY CO., LTD
100A/1200V IGBT for The Inverter and Motor Control Drives Legm100td120L4Hz
Leading Energy (Beijing)Electronic Technology Co., Ltd.
6inch Dummy Grade 4h N Type Silicon Carbide Wafer Semiconductor
Hangzhou HCJingRui Technology Co., Ltd.
100A/1200V IGBT for Welder and Inductive Heating Legm100bh120L1sz
Leading Energy (Beijing)Electronic Technology Co., Ltd.
High-Quality Sic Ingots and Rods in Various Sizes and Grades
Hangzhou HCJingRui Technology Co., Ltd.
75A/1200V IGBT for The Inverter and Motor Control Drives Legm75td120L4h
Leading Energy (Beijing)Electronic Technology Co., Ltd.
4-8 Inch Silicon Carbide Rods, Silicon Carbide Semi-Insulating Ingots
Hangzhou HCJingRui Technology Co., Ltd.
50A/1200V IGBT for The Inverter and Motor Control Drives Legm50be120L4Hz
Leading Energy (Beijing)Electronic Technology Co., Ltd.
6-Inch P-Grade Sic Wafer Sic Substrate MOS&Sbd
Hangzhou HCJingRui Technology Co., Ltd.
35A/1200V IGBT for The Inverter and Motor Control Drives Legm35be120L4Hz
Leading Energy (Beijing)Electronic Technology Co., Ltd.
6-Inch Ultra-P Grade N-Type Sic Wafer Sic Substrate
Hangzhou HCJingRui Technology Co., Ltd.
100A/1200V IGBT for The Inverter and Motor Control Drives Legm100td120L5h
Leading Energy (Beijing)Electronic Technology Co., Ltd.
15A/1200V IGBT for The Inverter and Motor Control and Drives Legm15be120e4Hz
Leading Energy (Beijing)Electronic Technology Co., Ltd.
4inch Dummy Grade Semi-Insulating Silicon Carbide Wafer
Hangzhou HCJingRui Technology Co., Ltd.
200A/1200V IGBT for The Inverter and Motor Control Drives Legm200bh120L6h
Leading Energy (Beijing)Electronic Technology Co., Ltd.
75A/1200V IGBT for The Inverter and Motor Control Drives Legm75be120L5h
Leading Energy (Beijing)Electronic Technology Co., Ltd.
60V 20A Nce60np2012K Nce N&P-Channel Complementary Power Mosfet with to-252-4L Used in H-Bridge
SHENZHEN HEYLOO ELECTRONIC TECHNOLOGY CO., LTD
4"6"8" P R D Grade Silicon Carbide Ingot China Sic Crystal Rod
Hangzhou HCJingRui Technology Co., Ltd.
450A/1200V Gbt for The Inverter and Motor Control Drives Legm450bh120L2h1
Leading Energy (Beijing)Electronic Technology Co., Ltd.
700V 5A Nce70t900K N-Channel Super Junction Power Mosfet Transistor for Pfc
SHENZHEN HEYLOO ELECTRONIC TECHNOLOGY CO., LTD
40A/1200V IGBT for The Inverter and Motor Control Drives Legm40bf120L4Hz
Leading Energy (Beijing)Electronic Technology Co., Ltd.
150V 265A Ncep040nh150ll Nce N-Channel Super Trench III Power Mosfet with Toll
SHENZHEN HEYLOO ELECTRONIC TECHNOLOGY CO., LTD
4 Inch P Grade High Purity Semi-Insulating Sic Substrate Sic Wafer
Hangzhou HCJingRui Technology Co., Ltd.
150A/1200V IGBT for The Inverter and Motor Control Drives Legm150be120L5h
Leading Energy (Beijing)Electronic Technology Co., Ltd.
40V 210A Nce40h21 Nce N-Channel Enhancement Mode Power Mosfet Transistors with to-220-3L
SHENZHEN HEYLOO ELECTRONIC TECHNOLOGY CO., LTD