Audited Supplier
4-inch P Grade
Diode, Power Electronic Components
CCC, RoHS
Pvt
6n Sic Powder
N-Type
Epi-Ready with Vacuum Packaging
N-Type Semiconductor
4h
<0001>
≤5μm
≤3μm(10mm*10mm)
≤5e12atoms/Cm2
HC
Multi-Waferorsingle Wafer Cassette Packaging
4Inch
China
Product Description
Semi-insulating silicon carbide substrates are single crystal slices formed by cutting, grinding, polishing, cleaning and other processes of semi-insulating silicon carbide crystals. As an important raw material for the third-generation semiconductors, single crystal substrate slices can be made into silicon carbide-based radio frequency devices through heteroepitaxial growth and device manufacturing. They are important basic materials for the development of the third-generation semiconductor industry. In order to meet customer demand for 4,6-inch products, the company provides domestic and foreign customers with 4,6-inch semi-insulating substrate products with high cost performance in batches.
Downstream products and applications
High-purity semi-insulated silicon carbide single crystal substrate is mainly used in 5G communication, radar system, seeker, satellite communication, aircraft and other fields, with the advantages of improving the radio frequency range, ultra-long distance recognition, anti-interference, high-speed, large-capacity information transmission and other applications, and is regarded as the most ideal substrate for the production of microwave power devices.
Downstream products and applications
High-purity semi-insulated silicon carbide single crystal substrate is mainly used in 5G communication, radar system, seeker, satellite communication, aircraft and other fields, with the advantages of improving the radio frequency range, ultra-long distance recognition, anti-interference, high-speed, large-capacity information transmission and other applications, and is regarded as the most ideal substrate for the production of microwave power devices.
| 6 4 Inch High Purity Semi-insulating SiC Substrate | ||||
| No. | Items | Unit | Production Grade | Dummy Grade |
| 1.Crystal Parameters | ||||
| 1.1 | Polytype | -- | 4H | 4H |
| 1.2 | Surface orientation on-axis | -- | <0001> | <0001> |
| 1.3 | Surface orientation off-axis | ° | 0±0.2° | 0±0.2° |
| 1.4 | (0004)(FWHM) | arcsec | ≤45arcsec | ≤100arcsec |
| 2. Electrical Parameters | ||||
| 2.1 | Type | -- | HPSI | HPSI |
| 2.2 | Resistivity | ohm·cm | ≥1E10ohm·cm | 70% area>1E5ohm·cm |
| 3.Mechanical Parameters | ||||
| 3.1 | Diameter | mm | 99.5~100mm | 99.5~100mm |
| 3.2 | Thickness | μm | 500±25μm | 500±25μm |
| 3.3 | Notch orientation | ° | [1-100]±5° | [1-100]±5° |
| 3.4 | Notch Depth | mm | 1~1.25mm | 1~1.25mm |
| 3.5 | LTV | μm | ≤2μm(5mm*5mm) | NA |
| 3.6 | TTV | μm | ≤5μm | ≤15μm |
| 3.7 | Bow | μm | -15μm~15μm | -45μm~45μm |
| 3.8 | Warp | μm | ≤20μm | ≤50μm |
| 3.9 | (AFM) Front (Si-face) Roughness | nm | Ra≤0.2nm(5μm*5μm) | Ra≤0.2nm(5μm*5μm) |
| 4.Structure | ||||
| 4.1 | Micropipe density | ea/cm2 | ≤1 ea/cm2 | ≤10ea/cm2 |
| 4.2 | Carbon inclusions density | ea/cm2 | ≤1 ea/cm2 | NA |
| 4.3 | Hexagonal void | -- | None | NA |
| 4.4 | Metal impurities | atoms/cm2 | ≤5E12 | NA |
| 5. Quality | ||||
| 5.1 | Front | -- | Si | Si |
| 5.2 | Surface Finish | -- | CMP Si-face CMP | CMP Si-face CMP |
| 5.3 | Particles | ea/wafer | ≤60(size≥0.3μm) | NA |
| 5.4 | Scratches | ea/mm | ≤2 ,Total Length≤Diameter | NA |
| 5.5 | Orange peel/pits/stains/striations/cracks/contamination | -- | None | NA |
| 5.6 | Edge chips/indents/fracture | -- | None | None |
| 5.7 | Polytype areas | -- | None | ≤30% (Cumulative area) |
| 5.8 | Front laser marking | -- | None | None |
| 6. Back Quality | ||||
| 6.1 | Back finish | -- | C-face CMP | C-face CMP |
| 6.2 | Scratches | ea/mm | ≤5 ,Total Length≤2*Diameter | NA |
| 6.3 | Back defects (edge chips/indents) | -- | None | None |
| 6.4 | Back roughness | nm | Ra≤0.2nm(5μm*5μm) | Ra≤0.2nm(5μm*5μm) |
| 6.5 | Back laser marking | -- | SEMI,NOTCH | SEMI,NOTCH |
| 6.6 | Edge | -- | Chamfer | Chamfer |
| Notes: "NA"means no request. Items not metioned may refer to SEMI-STD. | ||||
FAQ
Q1: What's the way of shipping ?
A: We accept DHL, Fedex, TNT, UPS, EMS, SF and etc.
Q2: How to pay?
A: T/T, PayPal and etc..
Q3: What's the deliver time?
A: For inventory: the delivery time is 10 workdays. For customized products: the delivery time is 10to 25 workdays. According to the quantity.
Q4: Can I customize the products based on my need?
A: A: Yes, we can customize the specifications according to your needs.
Q1: What's the way of shipping ?
A: We accept DHL, Fedex, TNT, UPS, EMS, SF and etc.
Q2: How to pay?
A: T/T, PayPal and etc..
Q3: What's the deliver time?
A: For inventory: the delivery time is 10 workdays. For customized products: the delivery time is 10to 25 workdays. According to the quantity.
Q4: Can I customize the products based on my need?
A: A: Yes, we can customize the specifications according to your needs.
