2-Inch Free-Standing GaN Wafer (silicon doped)

2-inch Free-standing U-GaN Substrates
	Excellent level (S)		Production level (A)		Research level (B)		Dummy level (C)	Note: (1) Useable area: edge and macro defects exclusion (2) 3 points: the miscut angles of positions (2, 4, 5) are 0.35 ± 0.15o
	S-1	S-2	A-1	A-2
Dimension	50.8 ± 1 mm
Thickness	350 ± 25 μm
Orientation flat	(1-100) ± 0.5o, 16 ± 1 mm
Secondary orientation flat	(11-20) ± 3o, 8 ± 1 mm
Resistivity (300K)	< 0.5 Ω·cm for N-type (Undoped; GaN-FS-C-U-C50)
TTV	≤ 15 μm
BOW	≤ 20 μm					≤ 40 μm
Ga face surface roughness	< 0.2 nm (polished) or < 0.3 nm (polished and surface treatment for epitaxy)
N face surface roughness	0.5 ~1.5 μm option: 1~3 nm (fine ground); < 0.2 nm (polished)
Package	Packaged in a cleanroom in single wafer container
Useable area	> 90%				>80%		>70%
Dislocation density	<9.9x105 cm-2	<3x106 cm-2	<9.9x105 cm-2	<3x106 cm-2	<3x106 cm-2
Orientation:C plane (0001) off angle toward M-axis	0.35 ± 0.15o (3 points)		0.35 ± 0.15o (3 points)		0.35 ± 0.15o (3 points)
Macro defect density (hole)	0 cm-2		< 0.3 cm-2		< 1 cm-2
Max size of macro defects			< 700 μm		< 2000 μm		< 4000 μm

Q1: What's the way of shipping ?
A:  We accept DHL, Fedex, TNT, UPS, EMS, SF and etc.
Q2: How to pay?
A:  T/T, PayPal and etc..
Q3: What's the deliver time?
A:  For inventory: the delivery time is 10 workdays.   For customized products: the delivery time is 10to 25 workdays. According to the quantity.
Q4: Can I customize the products based on my need?
A:  A: Yes, we can customize the specifications according to your needs.