6n Green Silicon Carbide Sic Powder Conductive Single Crystal Growth

       Semiconductor-grade silicon carbide polycrystalline powder Semi-insulating silicon carbide crystal material is a new generation of wide bandgap semiconductor material, which can break through the theoretical limitations of silicon-based semiconductor materials. It has high thermal conductivity (3 times that of silicon), high breakdown electric field strength (10 times that of silicon), high saturated electron drift velocity (2 times that of silicon), small dielectric constant, strong radiation resistance, good chemical stability, small lattice mismatch with GaN (4%), etc. It is a new generation of light-emitting diode (LED) substrate material and high-power power electronic material. This type of product produced by our company is mainly aimed at the growth needs of the third-generation semiconductor semi-insulating silicon carbide single crystal. The particle size can be precisely controlled from 100 microns to millimeters. The product purity is higher than 6N and the nitrogen content is lower than 0.5ppm.