Audited Supplier
2-Inch
RoHS
Green
6inch
350±25μm
4h
≤20 μm
≤70μm
Ra≤0.2nm
HC
Multi-Waferorsingle Wafer Cassette Packaging
2Inch
China
2804611900
Product Description
SIC Silicon Carbide Conductive, Semi-Insulating Substrate Wafers (Customizable) ★2" 4"6" 8" Conductive Silicon Carbide Substrate Wafers Silicon Carbide (SiC) is a new type of compound semiconductor material with superior performance. Silicon carbide semiconductors have excellent properties such as large bandgap width (about 3 times that of silicon), high critical field strength (about 10 times that of silicon), and high thermal conductivity (about 3 times that of silicon). They are ideal semiconductor materials for making high-temperature, high-frequency and high-power power electronic devices (power chips). At the same time, it is also an excellent semiconductor material second only to diamond. At present, we provide standard 2, 4, 6, and 8-inch silicon carbide substrate wafers. Used for the production of Schottky diodes (SBD), metal oxide semiconductor field effect transistors (MOSFET), junction field effect transistors (JFET) and bipolar junction transistors (BJT). These power electronic devices can be widely used in green energy and energy-saving systems including solar inverters, wind power generation and energy storage, hybrid power, electric vehicles, charging piles, smart grids, and household appliances.
6 Inch N-type SiC substrate wafer
| No. | Items | Unit | Ultra-P Grade | Production Grade | Research Grade | Dummy Grade |
| 1.Boule Parameters | ||||||
| 1.1 | Poly type | -- | 4H | |||
| 1.2 | Surface orientation error | ° | 4° toward <11-20>±0.15° | 4° toward <11-20>±0.5° | 4° toward <11-20>±0.5° | 4° toward <11-20>±0.5° |
| 2.Electrical Parameters | ||||||
| 2.1 | dopant | cm-³ | n-type Nitrogen | |||
| 2.2 | resistivity | ohm ·cm | 0.016~0.024ohm ·cm | 0.015~0.025ohm ·cm | 0.015~0.025ohm ·cm | NA |
| 3.Mechanical Parameters | ||||||
| 3.1 | diameter | mm | 150 ±0.25 mm | |||
| 3.2 | Thickness | μm | 350±25μm | |||
| 3.3 | Primary flat orientation | ° | [1-100]±5° | |||
| 3.4 | Primary flat length | mm | 47.5±1.5mm | 47.5±2.5mm | 47.5±2.5mm | 47.5±2.5mm |
| 3.5 | LTV | μm | ≤2μm(10mm*10mm) | ≤5μm(10mm*10mm) | ≤10μm(10mm*10mm) | ≤15μm(10mm*10mm) |
| 3.6 | TTV | μm | ≤5μm | ≤10 μm | ≤15 μm | ≤20 μm |
| 3.7 | Bow | μm | -15 μm~15 μm | -25 μm~25 μm | -45 μm~45 μm | -65 μm~65 μm |
| 3.8 | Warp | μm | ≤20μm | ≤35μm | ≤50μm | ≤70μm |
| 3.9 | (AFM)Front(Si-face)Roughness | nm | Ra≤0.2nm | Ra≤0.2nm | Ra≤0.2nm | Ra≤0.2nm |
| 4.Structure | ||||||
| 4.1 | micropipe density | ea/cm² | ≤0.15 ea/cm² | ≤0.5 ea/cm² | ≤1 ea/cm² | ≤2 ea/cm² |
| 4.2 | metal content | atoms/cm² | ≤5E10 atoms/cm² | ≤1E11 atoms/cm² | ≤1E11 atoms/cm² | NA |
| 4.3 | TSD | ea/cm² | ≤100ea/cm² | ≤300ea/cm² | ≤500ea/cm² | NA |
| 4.4 | BPD | ea/cm² | ≤600ea/cm² | ≤1000ea/cm² | ≤1500ea/cm² | NA |
| 5.Front Quality | ||||||
| 5.1 | front | -- | Si | Si | Si | Si |
| 5.2 | surface finish | -- | Si-face CMP | Si-face CMP | Si-face CMP | Si-face CMP |
| 5.3 | particle | ea/wafer | ≤60(size≥0.3 μm) | ≤100(size≥0.3 μm) | NA | NA |
| 5.4 | scratches | ea/mm | ≤2,Total Length≤1/2*Diameter | ≤5,Total Length≤Diameter | NA | NA |
| 5.5 | chips/indents/cracks/stai | -- | None | None | None | NA |
| 5.6 | Polytype areas | -- | None | ≤0.5%Cumulative area) | ≤2%Cumulative area) | ≤5%Cumulative area) |
| 5.7 | front marking | -- | None | None | None | None |
| 6.Back Quality | ||||||
| 6.1 | back finish | -- | C-face polished | |||
| 6.2 | scratches | ea/mm | ≤5,Total Length≤Diameter | NA | NA | NA |
| 6.3 | Back defects edge | -- | None | None | None | NA |
| 6.4 | Back roughness | nm | Ra≤0.2nm(5μm*5μm) | Ra ≤5nm | Ra ≤5nm | Ra ≤5nm |
| 7.Edge | ||||||
| 7.1 | Wafer Edge | -- | Chamfer | Chamfer | Chamfer | Chamfer |
| 8.Packaging | ||||||
| 8.1 | Packaging | -- | Epi-ready with vacuum packaging | |||
| 8.2 | Packaging | -- | Multi-waferorSingle wafer cassette packaging | |||
| SEMI-STDNotes:"NA"means no request.Items not metioned may refer to SEMI-STD. | ||||||
Q1: What's the way of shipping ?
A: We accept DHL, Fedex, TNT, UPS, EMS, SF and etc.
Q2: How to pay?
A: T/T, PayPal and etc..
Q3: What's the deliver time?
A: For inventory: the delivery time is 10 workdays. For customized products: the delivery time is 10to 25 workdays. According to the quantity.
Q4: Can I customize the products based on my need?
A: Yes, we can customize the specifications according to your needs.
Q5: How to guarantee the quality of your products?
A: Strict detection during production.Strict sampling inspection on products before shipment and intact product packaging ensured.
