25A 100V N-Channel Enhancement Mode Power Mosfet D25n10 to-252

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Jiangsu Donghai Semiconductor Co.,Ltd

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D25N10
Power Switching
2021
Discrete Device
Metal-Oxide Semiconductor
D25n10
to-252
N-Type Semiconductor
100V
25A
Wxdh
WXDH
Tape & Reel
Wuxi, China
8541290000
Product Description
PARAMETERSYMBOLVALUEUNIT
25N10/I25N10/E25N10/B25N10/D25N10F25N10
Maximum Drian-Source DC VoltageVDS100V
Maximum Gate-Drain VoltageVGS±20V
Drain Current(continuous)ID(T=25ºC)30A
(T=100ºC)21A
Drain Current(Pulsed)IDM90A
Single Pulse Avalanche EnergyEAS36mJ
Total DissipationTa=25ºCPtot22W
TC=25ºCPtot8835W
Junction TemperatureTj-55~175ºC
storage TemperatureTstg-55~175ºC
 
Features
Fast Switching
Low ON Resistance(Rdson≤36mΩ)
Low Gate Charge(Typ: 61 nC)
Low Reverse Transfer Capacitances(Typ: 84pF)
100% Single Pulse Avalanche Energy Test
100% ΔVDS Test
Applications
Power switching applications
LED Boost
UPS power supply
Load switch
 
Product Specifications and Packaging Models
Product ModelPackage TypeMark NameRoHSPackageQuantity
25N10TO-220C25N10Pb-freeTube1000/box
F25N10TO-220FF25N10Pb-freeTube1000/box
B25N10TO-251B25N10Pb-freeTube3000/box
D25N10TO-252D25N10Pb-freeTape & Reel2500/box
I25N10TO-262I25N10Pb-freeTube1000/box
E25N10TO-263E25N10Pb-freeTape & Reel800/box
 
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