4-8 Inch Silicon Carbide Rods, Silicon Carbide Semi-Insulating Ingots

Semi-insulating silicon carbide substrates are single crystal slices formed by cutting, grinding, polishing, cleaning and other processes of semi-insulating silicon carbide crystals. As an important raw material for third-generation semiconductors, single crystal substrate slices can be made into silicon carbide-based radio frequency devices through heteroepitaxial growth and device manufacturing. They are important basic materials for the development of the third-generation semiconductor industry. 6-inch substrates are currently the mainstream size in the industry. The company provides domestic and foreign customers with cost-effective 6-inch semi-insulating substrate products in batches.

Microwave radio frequency devices are made by growing a gallium nitride epitaxial layer on a semi-insulating silicon carbide substrate to produce silicon carbide-based gallium nitride epitaxial wafers, which can be further made into microwave radio frequency devices such as HEMT, which are used in information communication, radio detection and other fields
 

By growing a gallium nitride heteroepitaxial layer on a semi-insulating silicon carbide substrate, a silicon carbide-based gallium nitride epitaxial wafer is produced. Through wafer manufacturing, packaging and testing, it can be further made into microwave RF devices, which are mainly used in the RF field, such as 5G communications, phased array radars, radio detectors, etc.