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E73 1200V/75A IGBT Module Replace Infineon Fp75r12kt3

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Shenzhen Greelife Technology Co., Limited

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Guangdong, China
Catherine (Ms.)
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Model NO.:

WGL75P120E73

Key Material:

Sic

Manufacturing Technology:

Integrated Circuits Device

Material:

Compound Semiconductor

Type:

Intrinsic Semiconductor

Package:

MCM

Signal Processing:

Digital

Application:

Inverter

Model:

Wgl75p120e73

Batch Number:

2021+

Brand:

Cetc

Transport Package:

Carton

Specification:

L122.5*W62.5mm

Origin:

Cn

HS Code:

8504409190

Product Description

Product Photo:

Product parameter :

Parameter	symbol	conditions	value	unit
Collector-Emitter Voltage	V_CES	V_GE=0V, I_C =1mA, T_vj=25ºC	1200	V
Continuous Collector Current	I_C	Tc=80ºC, Tvjmax=175ºC	75	A
Peak Collector Current	I_CRM	tp=1ms	150	A
Gate-Emitter Voltage	V_GES	Tvj=25ºC	±20	V
Total Power Dissipation (IGBT-inverter)	P_tot	T_c=25ºC T_vjmax=175ºC	476	W

Features

Low inductance case
Low switching losses
Integrated NTC temperature sensor
Isolated baseplate
Low Vce(sat) with Planner technology
Vce(sat) with positive temperature coefficient
Including fast & soft recovery anti-parallel FWD
High short circuit capability(10us)
Low inductance module structure
Maximum junction temperature 175ºC

Benefits

Higher inverter output current for the same frame size
Reduced system costs by simplification of the inverter systems
Easy and most reliable assembly
High inter-connection reliability
suitable for press-in & soldering process

Applications

Commercial, construction and agricultural vehicles (CAV)
Motor control and drives
Solutions for solar energy systems
Uninterruptible Power Supply (UPS)
Soft switching welding machine
AC and DC servo drive amplifier

E73 IGBT module is one of the most popular IGBT packages worldwide and is used in many different applications, such as General Purpose Drives; Commercial, Construction and Agricultural Vehicles as well as eBus; Solar; Wind; Traction; UPS and finally, Transmission and Distribution. In the latest module generation it is now feasible to increase the module current to 200 A. This is possible through the new IGBT7 technology enabling a higher power density and reduced BoM costs.

Circuit Diagram

Package drawing

E73 Series products:

Model	Vces(V)	Ic(T=80)(A)	VCE(sat) Tj=125ºC	Eon+Eof(Tj=125)(mj)	R_thjc(KW)
WGL50P65E73	650	50	1.65	2.85	0.59
WGL75P65E73	650	75	1.65	4.28	0.47
WGL100P65E73	650	100	1.65	6.65	0.36
WGL50P120E73	1200	50	1.85	11.88	0.41
WGL75P120E73	1200	75	1.85	15.96	0.33
WGL50F65E73	650	50	1.65	2.85	0.59
WGL75F65E73	650	75	1.65	4.28	0.47
WGL100F65E73	650	100	1.65	6.65	0.36
WGL150F65E73	650	150	1.65	10.93	0.27
WGL200F65E73	650	200	1.65	15.58	0.21
WGL50F120E73	1200	50	1.85	11.88	0.41
WGL75F120E73	1200	75	1.85	15.96	0.33
WGL100F120E73	1200	100	1.85	17.48	0.20
WGL150F120E73	1200	150	1.85	34.2	0.17
WGL200F120E73	1200	200	1.85	45.2	0.13

FAQ:

1.Why is the IGBT specified for 175ºC overload?

The CETC IGBT is developed to operate at a continuous temperature of 175°C. The overload limitation is given by the package. Most of the applications are designed with an overload profile and here the IGBT is the perfect fit. The CETC IGBT provides the lowest static losses.

2.How to handle the high gate charge specified for IGBT datasheet?

The specified gate charge in the datasheet is for an operation with VGE of ± 20 V. Most customers use VGE in the range of +5.4 V to +7 V. Here the gate charge is much lower and with this value, typical switching frequencies can be addressed with standard drives.

3.Technical Support

In order to enable us to process your inquiry as efficiently as possible and ensure your case is duly reported, we kindly ask you to submit your request via our service team.