Audited Supplier
PDFN8*8 OSG65R125JF
RoHS, ISO
Metal Porcelain Tube
Sharp Cutoff Shielding Tube
Air Cooled Tube
Switch Transistor
High Frequency
Diffusion
Chip Transistor
High Power
Silicon
Orientalsemi
China
8541290000
Product Description
General Description
The GreenMOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.
The GreenMOS® Generic series is optimized for extreme switching performance to minimize switching loss. It is tailored for high power density applications to meet the highest efficiency standards.
Features
Low RDS(on) & FOM
Extremely low switching loss
Excellent stability and uniformity
Applications
PC power
LED lighting
Telecom power
Server power
EV Charger
Solar/UPS
Key Performance Parameters
| Parameter | Value | Unit |
| VDS, min @ Tj(max) | 700 | V |
| ID, pulse | 75 | A |
| RDS(ON), max @ VGS =10V | 125 | mΩ |
| Qg | 41.9 | nC |
Absolute Maximum Ratings at Tj =25°C unless otherwise noted
| Parameter | Symbol | Value | Unit |
| Drain-source voltage | VDS | 650 | V |
| Gate-source voltage | VGS | ±30 | V |
| Continuous drain current1) , TC=25 °C | ID | 25 | A |
| Continuous drain current1) , TC=100 °C | 16 | ||
| Pulsed drain current2) , TC=25 °C | ID, pulse | 75 | A |
| Continuous diode forward current1) , TC=25 °C | IS | 25 | A |
| Diode pulsed current2) , TC=25 °C | IS, pulse | 75 | A |
| Power dissipation3) , TC=25 °C | PD | 219 | W |
| Single pulsed avalanche energy5) | EAS | 730 | mJ |
| MOSFET dv/dt ruggedness, VDS =0…480 V | dv/dt | 50 | V/ns |
| Reverse diode dv/dt, VDS =0…480 V, ISD≤ID | dv/dt | 15 | V/ns |
| Operation and storage temperature | Tstg , Tj | -55 to 150 | °C |
Thermal Characteristics
| Parameter | Symbol | Value | Unit |
| Thermal resistance, junction-case | RθJC | 0.57 | °C/W |
| Thermal resistance, junction-ambient4) | RθJA | 62 | °C/W |
Electrical Characteristics at Tj =25°C unless otherwise specified
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Drain-source breakdown voltage | BVDSS | 650 | V | VGS =0 V, ID =1 mA | ||
| 700 | 740 | VGS =0 V, ID =1 mA, Tj =150 °C | ||||
| Gate threshold voltage | VGS(th) | 2.9 | 3.9 | V | VDS =VGS , ID =1 mA | |
| Drain-source on- state resistance | RDS(ON) | 0.115 | 0.125 | Ω | VGS =10 V, ID=12.5 A | |
| 0.278 | VGS =10 V, ID=12.5 A, Tj =150 °C | |||||
| Gate-source leakage current | IGSS | 100 | nA | VGS =30 V | ||
| - 100 | VGS =-30 V | |||||
| Drain-source leakage current | IDSS | 1 | μA | VDS =650 V, VGS =0 V |
Note
1) Calculated continuous current based on maximum allowable junction temperature.
2) Repetitive rating; pulse width limited by max. junction temperature.
3) Pd is based on max. junction temperature, using junction-case thermal resistance.
4) The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
5) VDD=100 V, VGS =10 V, L=80 mH, starting Tj =25 °C.
Ordering Information
| Package Type | Units/ Tube | Tubes/ Inner Box | Units/ Inner Box | Inner Boxes/ Carton Box | Units/ Carton Box |
| PDFN 8×8-L | 2500 | 2 | 5000 | 5 | 25000 |
| PDFN 8×8-S | 3000 | 1 | 3000 | 10 | 30000 |
Product Information
| Product | Package | Pb Free | RoHS | Halogen Free |
| OSG65R125JF | PDFN 8×8 | yes | yes | yes |
Supply Chain
Green Product Declaration
