Semiconductor Device Fabrication Fab Wafer Fabrication Etching Inductively Coupled Plasma Etching Machine Icp for Si/Sio2/Sinx/ Sic Beol Feol

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Guangzhou Minder-Hightech co.,Ltd

VIP   Audited Supplier 10 years
Profile Certified by SGS/BV
  • Guangdong, China
  • Minder Hu (Mr.)  
    manager
MD150-SICP
Installation, Training
One Year Warranty
Electrical Etching Machine
Silicon-Based:Si/Sio2/Sinxsic
Corrosion & Hollowed-out
ISO9001: 2000, CE
Reactive Ion Etching
High Precision
New
Minder-Hightech
Wooden Case
1170*750*1080mm
China
Product Description

Inductively coupled plasma etching machine-ICP

ItemMD150S-ICPMD200S-ICPMD150CS-ICPMD200CS-ICPMD300C-ICP
Product size≤6 inches≤8 inches≤6 inches≤8 inchesCustom≥12inches
SRF Power source0~1000W/2000W/3000W/5000WAdjustable,automatic matching\,13.56MHz/27MHz
BRF Power source0~300W/0~500W/0~1000WAdjustable, automatic matching,2MHz/13.56MHz
Molecular pumpNon corrosive : 600 /1300 (L/s)/CustomAnti-corrosion:600 /1300 (L./s)/Custom600/1300(L/s) /Custom
Foreline pumpMechanical pump / dry pumpAnti corrosion dry pumpMechanical pump / dry pump
Pre pumping pumpMechanical pump / dry pumpMechanical pump / dry pump
Process pressureUncontrolled pressure/0-0.1/1/10Torr controlled pressure
Gas typeH2/CH4/O2/N2/Ar/SF6/CF4/
CHF3/C4F8/NF3/NH3/C2F6/Custom
(Up to 12 channels, no corrosive & toxic gas)
H2/CH4/O2/N2/Ar/SF6/CF4/CHF3/ C4F8/NF3/NH3/C2F6/Cl2/BCl3/HBr/
Custom(Up to 12 channels)
Gas range0~5sccm/50sccm/100sccm/200sccm/300sccm/500sccm/1000sccm/Custom
LoadLockYes/NoYes
Sample tem control10°C~Roomtem/ -30°C~150°C /Custom-30°C~200°C/Custom
Back helium coolingYes/NoYes
Process cavity liningYes/NoYes
Cavity wall tem controlNo/Room tem-60/120°CRoom tem~60/120°C
Control SystemAuto/custom
Etching materialSilicon-base: Si/SiO2/
SiNx/ SiC.....
Organic materials:PR/Organic
film......
Silicon-base: Si/SiO2/SiNx/SiC
III-V: InP/GaAs/GaN......
IV-IV: SiC
II-VI: CdTe......
Magnetic material / alloy material
Metallic materials: Ni/Cr/Al/Cu/Au...
Organic materials: PR/Organic film......
Silicon deep etching
Process result
Quartz / silicon / grating etching
Using BR mask to etch quartz or silicon materials, the grating array pattern has the thinnest line up to 300nm and the sidewall steepness of the pattern is close to > 89° , which can be applied to 3D display, micro optical devices, optoelectronic communication, etc


Compound / semiconductor etching
Accurate control of sample surface temperature can well control the etching morphology of GaN based, GaAs, InP and metal materials. lt is suitable for blue lED devices, lasers, optical communication and other applications.


Silicon-based material etching
it is suitable for etching silicon based materials such as Si, SiO2, and SiNx. lt can realize silicon line etching above 50nm and silicon deep hole etching below 100um



Minder-Hightech is sales and service representative in semiconductor and electronic product industry equipment. 
The company is committed to providing customers with Superior, Reliable, and One-Stop Solutions for machinary equipment. 





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