Silicon Carbide Crystal Growth Furnace

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Hangzhou HCJingRui Technology Co., Ltd.

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6 inches& 8 inches
CE, ISO
Vertical
Industrial
Crucible Melting Furnace
Aluminum Die-casting
Electric
6&8
KY
Carrier Base, Clamping Components, Turning Parts,
tower
China
8486109000
Product Description
Silicon carbide crystal growth furnace
1. Equipment structure
2. Equipment overview
The silicon carbide crystal growth furnace is mainly used to grow large-sized, high-quality SiC single crystals using the physical vapor transport method (PVT).
3. Technical advantages
1. Adopt a dual-coil design and based on multi-physics simulation, optimize the spacing, number of turns, coil position and other parameters of the two coils to achieve independent control of the temperature field of the seed crystal and the source, and achieve large-size and high-quality silicon carbide growth. The warm field.
2. Carry out research on the design of the crucible's independent rotating mechanism, and innovatively introduce an independent support design into the crucible's rotating structure, so that the crucible can rotate independently of the heat preservation during the growth process and reduce the impact of heat preservation on the temperature field of the crucible. Solve the problem of uncontrollable temperature field due to thermal insulation loss and deformation between furnaces during the growth of silicon carbide single crystal, and improve the crystal growth yield.
3. Combine numerical simulation and theoretical calculations to optimize the crucible and temperature gradient structures, reveal the crystallization and kinetic processes, break through the preparation process of 6-inch SiC crystals, and effectively solve the difficult problem of defect enrichment in SiC crystals.
4. Equipment parameters
quartz reflectorDiameter 440mmx900mmPower frequency, HZ50±1
Maximum operating temperature 2600° C (in argon) Number of phases3
working gasArgon, NitrogenCompressed gas, MPa0.6
Maximum vacuum value Torr10-5 TorrMaximum power, kw50
Generator power kw70kwCrystal growth days, days7
Generator power frequency kHz12kHzNitrogen consumption, m3/furnace≤0.25
Automated parameter control system Electrode connection method
cooling system50kW cooling unit (closed circuit)Equipment dimensions (length x width x height) mm920x920x2790
Supply voltage, V380±19Maximum current, A90
Output voltage, V500-550  
Note: Customized services can be provided according to customer requirements
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