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To252 Sfs06r06df Vds-60V ID-210A RDS (ON) -6milliohm Qg-30nc N-Channel Power Mosfet

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Shanghai Winture Electric Co., Ltd.

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Shanghai, China
Joy Li (Ms.)

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Model NO.:

TO252 SFS06R06DF

Certification:

RoHS, ISO

Shape:

Metal Porcelain Tube

Shielding Type:

Sharp Cutoff Shielding Tube

Cooling Method:

Air Cooled Tube

Function:

Switch Transistor

Working Frequency:

High Frequency

Structure:

Planar

Encapsulation Structure:

Chip Transistor

Power Level:

High Power

Material:

Silicon

Trademark:

Orientalsemi

Transport Package:

Carton

Specification:

35x37x30cm

Origin:

China

HS Code:

8541290000

Product Description

General Description

FSMOS^® MOSFET is based on Oriental Semiconductor's unique device design to achieve low R_DS(ON), low gate charge, fast switching and excellent avalanche characteristics. The low V_th series is specially designed to use in synchronous rectification power systems with low driving voltage.

Features

Low R_DS(ON) & FOM
Extremely low switching loss
Excellent reliability and uniformity
Fast switching and soft recovery

Applications

PD charger
Motor driver
Switching voltage regulator
DC-DC convertor
Switched mode power supply

Key Performance Parameters

Parameter	Value	Unit
VDS, min @ Tj(max)	60	V
ID, pulse	210	A
RDS(ON) max @ VGS=10V	6	mΩ
Q_g	30	nC

Marking Information

Product Name	Package	Marking
SFS06R06DF	TO252	SFS06R06D

Absolute Maximum Ratings at T_j=25°C unless otherwise noted

Parameter	Symbol	Value	Unit
Drain source voltage	VDS	60	V
Gate source voltage	VGS	±20	V
Continuous drain current¹⁾, T_C=25 °C	I_D	70	A
Pulsed drain current²⁾, T_C=25 °C	ID, pulse	210	A
Continuous diode forward current¹⁾, T_C=25 °C	I_S	70	A
Diode pulsed current²⁾, T_C=25 °C	IS, Pulse	210	A
Power dissipation³⁾, T_C=25 °C	P_D	87	W
Single pulsed avalanche energy⁵⁾	EAS	66	mJ
Operation and storage temperature	Tstg,Tj	-55 to 150	°C

Thermal Characteristics

Parameter	Symbol	Value	Unit
Thermal resistance, junction-case	RθJC	1.44	°C/W
Thermal resistance, junction-ambient⁴⁾	RθJA	62	°C/W

Electrical Characteristics at T_j=25°C unless otherwise specified

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Drain-source breakdown voltage	BVDSS	60			V	V_GS=0 V, I_D=250 μA
Gate threshold voltage	VGS(th)	1.0		2.5	V	V_DS=V_GS, I_D=250 μA
Drain-source on-state resistance	RDS(ON)		4.7	6	mΩ	V_GS=10 V, I_D=20 A
Drain-source on-state resistance	RDS(ON)		6.4	10	mΩ	V_GS=4.5 V, I_D=10 A
Gate-source leakage current	IGSS			100	nA	V_GS=20 V
Gate-source leakage current	IGSS			-100	nA	V_GS=-20 V
Drain-source leakage current	IDSS			1	μA	V_DS=60 V, V_GS=0 V
Gate resistance	R_G		2.8		Ω	ƒ=1 MHz, Open drain

Dynamic Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Input capacitance	Ciss		2136		pF	V_GS=0 V, V_DS=50 V, ƒ=100 kHz
Output capacitance	Coss		332		pF
Reverse transfer capacitance	Crss		10.6		pF
Turn-on delay time	td(on)		22.9		ns	V_GS=10 V, V_DS=50 V, R_G=2 Ω, I_D=25 A
Rise time	t_r		6.5		ns
Turn-off delay time	td(off)		45.7		ns
Fall time	t_f		20.4		ns

Gate Charge Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Total gate charge	Q_g		30		nC	V_GS=10 V, V_DS=50 V, I_D=25 A
Gate-source charge	Qgs		5.8		nC
Gate-drain charge	Qgd		6.1		nC
Gate plateau voltage	Vplateau		3.6		V

Body Diode Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Diode forward voltage	VSD			1.3	V	I_S=20 A, V_GS=0 V
Reverse recovery time	trr		50.3		ns	V_R=50 V, I_S=25 A, di/dt=100 A/μs
Reverse recovery charge	Qrr		45.1		nC
Peak reverse recovery current	Irrm		1.5		A

Note

Calculated continuous current based on maximum allowable junction temperature.
Repetitive rating; pulse width limited by max. junction temperature.
Pd is based on max. junction temperature, using junction-case thermal resistance.
The value of R_θJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T_a=25 °C.