6inch Dummy Grade 4h N Type Silicon Carbide Wafer Semiconductor Video - MadeInChina.com

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6inch Dummy Grade 4h N Type Silicon Carbide Wafer Semiconductor 2025-04-09 2290IP Unknown
	Sapphire Semiconductor Crystal Substrate Material Sapphire Wafer 484 views Customizable 4h N-Type Silicon Carbide Cutting Wafers China 214 views 6inch Dummy Grade 4h N Type Silicon Carbide Wafer Semiconductor 229 views 4"6inch Silicon Carbide Rod Sic Semi-Insulated Sic Ingot 244 views 4inch Dummy Grade High Purity Semi-Insulating Silicon Carbide Wafer 207 views

Product Specifications

Model NO.:

6Inch Dummy Grade

Certification:

CCC, CE, RoHS

Diameter:

6inch

Hickness:

350±25μm

Poly Type:

4h

Ttv:

≤20 μm

Warp:

≤70μm

(Afm)Front(Si-Face)Roughness:

Ra≤0.2nm

Trademark:

HC

Specification:

6Inch

Origin:

China

HS Code:

2849200000

You May Like: Silicon Carbide Wafer, Sic Wafer, Sic Substrate, Sic Crystal

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