Double Polished Single Crystal Silicon Carbide Substrate Sic Wafer Ingot Video,Demo, How It Works & Features_MadeInChina.com

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Double Polished Single Crystal Silicon Carbide Substrate Sic Wafer Ingot Video,Demo, How It Works & Features 2025-04-09 4870
	99% B4c Boron Carbide 500nm Micro Powder Boron Carbide 0.5um 235 views Best Selling Good Quality Abrasive Material Green Powder Silicone Carbide 379 views Double Polished Single Crystal Silicon Carbide Substrate Sic Wafer Ingot 487 views 95% Boron Carbide -325 Mesh B4c Boron Carbide F325 Manufacturer 212 views High Temperature Smelting Silicon Carbide Graphite Crucibles 330 views

Product Specifications

Model NO.:

4H-N

Grade:

P & D Grade

Spec:

4 Inches 6 Inches etc

Raw Material:

6n Sic

Types:

N or Si

Type:

N-type Semiconductor

Manufacturing Technology:

Chemical Vapor Deposition

Material:

Sic

Package:

Custom

Signal Processing:

No

Application:

Semiconductor

Model:

4h-N

Batch Number:

No

Brand:

No

Trademark:

No

Transport Package:

Foam Bag

Specification:

4 6 inches

Origin:

China

HS Code:

3818009000

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