High-Performance Infineon IGBT Module for Efficient Power Conversion Video - MadeInChina.com

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High-Performance Infineon IGBT Module for Efficient Power Conversion 2025-04-09 2120IP Unknown
	FUJI IGBT Module Original Stock Supply 379 views Original Genuine Infineon Thyristor Module in Stock 364 views High-Performance Infineon IGBT Module for Efficient Power Conversion 212 views Stock New Original Bussmann Quick Fuses BS88 267 views Sanrex Diode&Thyristor Original Supply 207 views

Product Specifications

Model NO.:

BSM200GA120DN2

Conductive Type:

Bipolar Integrated Circuit

Integration:

GSI

Operating Temperature:

-55℃ - 125℃

Shape:

DIP

Technics:

Semiconductor IC

Trademark:

Infineon

Transport Package:

Box-Packed

Specification:

Standard packaging

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