High Poewr Vacuum Electron Tube (7T85RB) Video,Demo, How It Works & Features_MadeInChina.com

MadeInChina.com > Video> Electrical & Electronics > Electronic Tube & Transistor > Other Electronic Tubes & Transistors

High Poewr Vacuum Electron Tube (7T85RB) Video,Demo, How It Works & Features 2025-04-09 2590
	High Frequency Metal Ceramic RF Power Tube (FU-946F) 305 views High Frequency Ceramic Vacuum Tube (RS2048CJ, RS2048CJC, RS3021CJ) 469 views High Poewr Vacuum Electron Tube (7T85RB) 259 views Tb3/750, 5867, 5867A Vacuum Glass Tube 459 views Power Tube Glass Tube Electron Tube (TB4-1250) 294 views

Product Specifications

Model NO.:

7T85RB

Shape:

Metal Porcelain Tube

Cooling Method:

Air Cooled Tube

Working Frequency:

High Frequency

Encapsulation Structure:

Other

Power Level:

High Power

Material:

Metal Ceramic

Filament Voltage:

6.3V

Filament Current:

35A

Amplifcation Factor:

21

Max Power:

5.1kw

Working Position:

Vertical

Max Height:

230mm

Max Diameter:

130mm

Max Weight:

1.5kg

Cooling:

Forced Air

Trademark:

SETEC

Transport Package:

Foam Packing

Origin:

China

HS Code:

8540890090

Like 0 Dislike 0 Comment 0

More>Recommended Video

Sic Diode To247 Ost75n65hswf Vces-650V Maximum Junction Temperature175, N-Channel Power IGBT

367

Sic Diode To247 Ost75n65hswf Vces-650V Maximum Junction Temperature175, N-Channel Power IGBT

To247 Ost30n65hmf Vces-650V Maximum Junction Temperature175, Pulse-120A Vce (sat) -1.5V N-Channel Power IGBT

497

To247 Ost30n65hmf Vces-650V Maximum Junction Temperature175, Pulse-120A Vce (sat) -1.5V N-Channel Power IGBT

High Quality Transistors Fgh40n60SMD To247 600V 40A 40n60 IGBT Tube Fgh40n60

264

High Quality Transistors Fgh40n60SMD To247 600V 40A 40n60 IGBT Tube Fgh40n60

Vds-650V ID-108A RDS (ON) -99ohm N-Channel Power Mosfet

443

Vds-650V ID-108A RDS (ON) -99ohm N-Channel Power Mosfet

Current Transducer HLSR-P series IPN = 10 ... 50 A DC, AC, pulsed MOSFET Fetures Applications Diode LEM-HLSR10-P

466

Current Transducer HLSR-P series IPN = 10 ... 50 A DC, AC, pulsed MOSFET Fetures Applications Diode LEM-HLSR10-P

To247 Ost90n65hm2f Vces-650V Maximum Junction Temperature175, IC, Pulse-360A N-Channel Power IGBT

293

To247 Ost90n65hm2f Vces-650V Maximum Junction Temperature175, IC, Pulse-360A N-Channel Power IGBT

833A for Glass Vacuum Tube

307

833A for Glass Vacuum Tube

Qcm4045 Photovoltaic Diode Photovoltaic Solar Cell Protection Schottky Diode

336

Qcm4045 Photovoltaic Diode Photovoltaic Solar Cell Protection Schottky Diode

C106 C106m C106mg 4A 600V 0.5W to-126 Thyristor SCR Transistor

500

C106 C106m C106mg 4A 600V 0.5W to-126 Thyristor SCR Transistor

EV Charger Solar/UPS To220f Osg80r380FF Vds-850V ID-33A RDS (ON) -380milliohm Qg-22.2nc Mode N-Channel Power Mosfet

256

EV Charger Solar/UPS To220f Osg80r380FF Vds-850V ID-33A RDS (ON) -380milliohm Qg-22.2nc Mode N-Channel Power Mosfet

Vacuum Valve Power Triode Tube RS3060cj for High Frequency Yarn Dryer (RS3060CL, RS3060CJC)

327

Vacuum Valve Power Triode Tube RS3060cj for High Frequency Yarn Dryer (RS3060CL, RS3060CJC)

NPN Darlington Bipolar Power Transistor TIP140

422

NPN Darlington Bipolar Power Transistor TIP140

©1996-2025 Made in China All Rights Reserved
MadeinChina.com is a leading global B2B marketplace connecting worldwide buyers with reliable China suppliers and manufacturers.