Name: RF Tube Triode 3cx2500h3 for Industrial Radio Frequency Heating
Uploaded: 2026-02-21T16:01:18+08:00
Description: Watch the RF Tube Triode 3cx2500h3 for Industrial Radio Frequency Heating video demo to see how it works, key features, and real-use scenarios. A helpful video guide before you buy.,RS3060cl,RS2054sk,Th558,3cx2500h3,Th537,Th584,RS1034sk,Th339,Th338,Oscillator Tube,Power Gride Tube,Triode,Transmitting Tube

MadeInChina.com > Video> Electrical & Electronics > Electronic Tube & Transistor > Other Electronic Tubes & Transistors

RF Tube Triode 3cx2500h3 for Industrial Radio Frequency Heating Video,Demo, How It Works & Features 2025-04-09 4970
	Variable Vacuum Ceramic Capacitors Cktb300/20/100 for Hf Generator 468 views Ceramic Capacitor Twxf135285-5000PF, 20kv for Hf Generators 364 views RF Tube Triode 3cx2500h3 for Industrial Radio Frequency Heating 497 views Triode Tube 833A/ Fu-33 for Industrial Heating 432 views Eletron Tube 833A Triode for Transmitting 234 views

Product Specifications

Model NO.:

3CX2500H3

Shape:

Metal Porcelain Tube

Shielding Type:

Sharp Cutoff Shielding Tube

Cooling Method:

Air Cooled Tube

Function:

High Frequency Generator for Oscillator

Working Frequency:

High Frequency

Structure:

Metal- Ceramic

Encapsulation Structure:

Metal- Ceramic

Power Level:

High Power

Material:

Metal- Ceramic

Trademark:

Beijing Jenerator

Transport Package:

Suitable for Long-Distance Transportation

Specification:

Output power 10kW

Origin:

China

HS Code:

8540890090

Like 0 Dislike 0 Comment 0

More>Recommended Video

Sic Diode To247 Ost75n65hswf Vces-650V Maximum Junction Temperature175, N-Channel Power IGBT

396

Sic Diode To247 Ost75n65hswf Vces-650V Maximum Junction Temperature175, N-Channel Power IGBT

Gas Discharge Tube Manufacturer Support Customized 75V to 1000V Gdt

570

Gas Discharge Tube Manufacturer Support Customized 75V to 1000V Gdt

To247 Ost30n65hmf Vces-650V Maximum Junction Temperature175, Pulse-120A Vce (sat) -1.5V N-Channel Power IGBT

506

To247 Ost30n65hmf Vces-650V Maximum Junction Temperature175, Pulse-120A Vce (sat) -1.5V N-Channel Power IGBT

8*8mm Switching Spark Gap Gas Discharge Tube Switch Discharge Tube

268

8*8mm Switching Spark Gap Gas Discharge Tube Switch Discharge Tube

High Quality Transistors Fgh40n60SMD To247 600V 40A 40n60 IGBT Tube Fgh40n60

271

High Quality Transistors Fgh40n60SMD To247 600V 40A 40n60 IGBT Tube Fgh40n60

Vds-650V ID-108A RDS (ON) -99ohm N-Channel Power Mosfet

448

Vds-650V ID-108A RDS (ON) -99ohm N-Channel Power Mosfet

Current Transducer HLSR-P series IPN = 10 ... 50 A DC, AC, pulsed MOSFET Fetures Applications Diode LEM-HLSR10-P

472

Current Transducer HLSR-P series IPN = 10 ... 50 A DC, AC, pulsed MOSFET Fetures Applications Diode LEM-HLSR10-P

To247 Ost90n65hm2f Vces-650V Maximum Junction Temperature175, IC, Pulse-360A N-Channel Power IGBT

298

To247 Ost90n65hm2f Vces-650V Maximum Junction Temperature175, IC, Pulse-360A N-Channel Power IGBT

310

833A for Glass Vacuum Tube

Switching Spark Gap 600V Discharge Tube Gdt

416

Switching Spark Gap 600V Discharge Tube Gdt

Qcm4045 Photovoltaic Diode Photovoltaic Solar Cell Protection Schottky Diode

341

Qcm4045 Photovoltaic Diode Photovoltaic Solar Cell Protection Schottky Diode

C106 C106m C106mg 4A 600V 0.5W to-126 Thyristor SCR Transistor

507

C106 C106m C106mg 4A 600V 0.5W to-126 Thyristor SCR Transistor

©1996-2026 Made in China All Rights Reserved
MadeinChina.com is a trusted global B2B platform with over 20 years of experience, connecting worldwide buyers with reliable and verified Chinese suppliers and manufacturers.

RF Tube Triode 3cx2500h3 for Industrial Radio Frequency Heating Video,Demo, How It Works & Features