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Sic Diode To247 Ost80n65hewf Vces-650V Maximum Junction Temperature175, IC, Pulse-320A Vce (sat) -1.45V Qg-168nc Power IGBT

Name: Sic Diode To247 Ost80n65hewf Vces-650V Maximum Junction Temperature175, IC, Pulse-320A Vce (sat) -1.45V Qg-168nc Power IGBT
Uploaded: 2025-03-27T02:39:15+08:00

2025-04-09 3070IP Unknown

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Product Specifications

Model NO.:

IGBT-Sic Diode TO247 OST80N65HEWF

Certification:

RoHS, ISO

Shape:

ST

Shielding Type:

Sharp Cutoff Shielding Tube

Cooling Method:

Air Cooled Tube

Function:

Switch Transistor

Working Frequency:

High Frequency

Structure:

Diffusion

Encapsulation Structure:

Chip Transistor

Power Level:

High Power

Material:

Silicon

Trademark:

Orientalsemi

Transport Package:

Carton

Origin:

China

HS Code:

8541290000

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