Swipe or use the arrows to view product images.
240A 60V N-Channel Enhancement Mode Power Mosfet Dhs022n06 to-220c
| Price | $0.20 |
|---|---|
| Min Order | 5000 Pieces |
| Availability | In Stock |
| Shipping From | Jiangsu, China |
| Popularity | 423 people viewed |
Model NO.:
DHS022N06
Application:
Power Switching, Converters, Full Bridge Control
Batch Number:
2021
Manufacturing Technology:
Discrete Device
Material:
Metal-Oxide Semiconductor
Model:
Dhs022n06
Package:
to-220c
Type:
N-Type Semiconductor
Voltage:
60V
Current:
240A
Brand:
Wxdh
Trademark:
WXDH
Transport Package:
Tape & Reel
Origin:
Wuxi, China
HS Code:
8541290000
Product Description
| PARAMETER | SYMBOL | VALUE | UNIT | |||
DHS02 2N06/ DHS02 2N06E/ DHS02 2N06B/ DHS02 2N06D | DHS02 2N06F | |||||
| Drian-to-Source Voltage | VDSS | 60 | V | |||
| Gate-to-Source Voltage | VGSS | ±20 | V | |||
| Drain Current(continuous) | ID(T=25ºC) | 240 | A | |||
| (T=100ºC) | 168 | A | ||||
| Drain Current(Pulsed) | IDM | 960 | A | |||
| Single Pulse Avalanche Energy | EAS | 1190 | mJ | |||
| Total Dissipation | Ta=25ºC | Ptot | 2.9 | 2 | W | |
| TC=25ºC | Ptot | 255 | 54 | W | ||
| Junction Temperature | Tj | -55~175 | ºC | |||
| storage Temperature | Tstg | -55~175 | ºC | |||
| Features |
| Fast Switching |
| Low ON Resistance |
| Low Gate Charge |
High avalanche current |
| Low Reverse Transfer Capacitances |
| 100% Single Pulse Avalanche Energy Test |
| 100% ΔVDS Test |
| Applications |
| Power switching applications |
Automotive electronics |
Inverter management system |
Power tools |
| Product Specifications and Packaging Models | |||||
| Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
DHS022N06 | TO-220C | DHS022N06 | Pb-free | PIPE | 1000/box |
DHS022N06F | TO-220F | DHS022N06F | Pb-free | PIPE | 1000/box |
DHS022N06E | TO-263 | DHS022N06E | Pb-free | Reel | 800/box |
DHS022N06B | TO-251B | DHS022N06B | Pb-free | PIPE | 3000/box |
DHS022N06D | TO-252B | DHS022N06D | Pb-free | Reel | 5000/box |
- Similar Products
$1.50
5000 Pieces (MOQ)
Insulated Gate Bipolar Transistor IGBT G40n60d to-247 **%off
Jiangsu Donghai Semiconductor Co.,Ltd
$390.00
10 piece (MOQ)
6-Inch P-Grade Sic Wafer Sic Substrate MOS&Sbd
Hangzhou HCJingRui Technology Co., Ltd.
$1.50
5000 Pieces (MOQ)
Silicon NPN Triple Diffused Transistor 5200 to-3pl **%off
Jiangsu Donghai Semiconductor Co.,Ltd