21A 650V N-Channel Super Junction Power Mosfet Dhsj21n65W to-247

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Jiangsu Donghai Semiconductor Co.,Ltd

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DHSJ21N65W
UPS, Pfc, SMPS
2023
Discrete Device
Metal-Oxide Semiconductor
Dhsj21n65W
to-247
N-Type Semiconductor
650V
21A
Wxdh
WXDH
Carton
Wuxi, China
8541290000
Product Description

 
Features
Fast switching
Low on resistance(Rdson≤0.165Ω)
Low gate charge(Typ: 50nC)
Low reverse transfer capacitances(Typ: 3.5pF)
100% Single Pulse Avalanche Energy Test
100% ΔVDS Test
Applications
Power factor correction(PFC).
Switched mode power supplies(SMPS).
Uninterruptible power supply(UPS).
AC to DC Converters
Telecom, SOLAR
 
PARAMETERSYMBOLRATINGUNIT
Drian-to-Source VoltageVDSS650V
Gate-to-Source VoltageVGSS±30V
Continuous Drain CurrentID TC=25ºC21A
TC=100ºC13.2A
Pulsed Drain CurrentIDM63A
Single Pulse Avalanche EnergyEAS484mJ
Power DissipationTa=25ºCPtot3W
TC=25ºCPtot151W
Junction Temperature RangeTj-55~150ºC
Storage Temperature RangeTstg-55~150ºC
 
Product Specifications and Packaging Models
Product ModelPackage TypeMark NameRoHSPackageQuantity
DHSJ21N65W
TO-220C
DHSJ21N65W
Pb-freeTube300/box
 
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