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EV Charger Solar/UPS To220f Osg80r380FF Vds-850V ID-33A RDS (ON) -380milliohm Qg-22.2nc Mode N-Channel Power Mosfet
| Price | Negotiable |
|---|---|
| Min Order | 1000 Pieces |
| Availability | In Stock |
| Shipping From | Shanghai, China |
| Popularity | 292 people viewed |
Model NO.:
TO220F OSG80R380FF
Certification:
RoHS, ISO
Shape:
Metal Porcelain Tube
Shielding Type:
Sharp Cutoff Shielding Tube
Cooling Method:
Air Cooled Tube
Function:
Switch Transistor
Working Frequency:
High Frequency
Structure:
Planar
Encapsulation Structure:
Chip Transistor
Power Level:
High Power
Material:
Silicon
Trademark:
Orientalsemi
Origin:
China
HS Code:
8541290000
Product Description
General Description
The GreenMOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.
The GreenMOS® Generic series is optimized for extreme switching performance to minimize switching loss. It is tailored for high power density applications to meet the highest efficiency standards.
Features
Low RDS(ON) & FOM
Extremely low switching loss
Excellent stability and uniformity
Applications
PC power
LED lighting
Telecom power
Server power
EV Charger
Solar/UPS
Key Performance Parameters
| Parameter | Value | Unit |
| VDS, min @ Tj(max) | 850 | V |
| ID, pulse | 33 | A |
| RDS(ON) , max @ VGS =10V | 380 | mΩ |
| Qg | 22.2 | nC |
Absolute Maximum Ratings at Tj =25°C unless otherwise noted
| Parameter | Symbol | Value | Unit |
| Drain-source voltage | VDS | 800 | V |
| Gate-source voltage | VGS | ±30 | V |
| Continuous drain current1) , TC=25 °C | ID | 11 | A |
| Continuous drain current1) , TC=100 °C | 6.9 | ||
| Pulsed drain current2) , TC=25 °C | ID, pulse | 33 | A |
| Continuous diode forward current1) , TC=25 °C | IS | 11 | A |
| Diode pulsed current2) , TC=25 °C | IS, pulse | 6.9 | A |
| Power dissipation3) , TC=25 °C | PD | 34 | W |
| Single pulsed avalanche energy5) | EAS | 400 | mJ |
| MOSFET dv/dt ruggedness, VDS =0…640 V | dv/dt | 50 | V/ns |
| Reverse diode dv/dt, VDS =0…640 V, ISD≤ID | dv/dt | 15 | V/ns |
| Operation and storage temperature | Tstg , Tj | -55 to 150 | °C |
Thermal Characteristics
| Parameter | Symbol | Value | Unit |
| Thermal resistance, junction-case | RθJC | 3.68 | °C/W |
| Thermal resistance, junction-ambient4) | RθJA | 62.5 | °C/W |
Electrical Characteristics at Tj =25°C unless otherwise specified
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Drain-source breakdown voltage | BVDSS | 800 | V | VGS =0 V, ID =250 μA | ||
| 850 | VGS =0 V, ID =250 μA, Tj =150 °C | |||||
| Gate threshold voltage | VGS(th) | 2.9 | 3.9 | V | VDS =VGS , ID =250 μA | |
| Drain-source on- state resistance | RDS(ON) | 0.30 | 0.38 | Ω | VGS =10 V, ID=5.5 A | |
| 0.69 | VGS =10 V, ID=5.5 A, Tj =150 °C | |||||
| Gate-source leakage current | IGSS | 100 | nA | VGS =30 V | ||
| - 100 | VGS =-30 V | |||||
| Drain-source leakage current | IDSS | 10 | μA | VDS =800 V, VGS =0 V |
Ordering Information
| Package Type | Units/ Tube | Tubes/ Inner Box | Units/ Inner Box | Inner Boxes/ Carton Box | Units/ Carton Box |
| TO220F-C | 50 | 20 | 1000 | 6 | 6000 |
| TO220F-J | 50 | 20 | 1000 | 5 | 5000 |
Product Information
| Product | Package | Pb Free | RoHS | Halogen Free |
| OSG80R380FF | TO220F | yes | yes | yes |
Supply Chain
Green Product Declaration
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