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Enhancement Mode N-Channel Power IGBT Transistor

Price $1.30
Min Order 330 Pieces
Availability In Stock
Shipping From Shanghai, China
Popularity 465 people viewed
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Model NO.:
To247 OST20N135HRF
Certification:
RoHS, ISO
Shape:
ST
Shielding Type:
Remote Cut-Off Shielding Tube
Cooling Method:
Naturally Cooled Tube
Function:
Switch Transistor
Working Frequency:
High Frequency
Structure:
Diffusion
Encapsulation Structure:
Plastic Sealed Transistor
Power Level:
Medium Power
Material:
Silicon
Application1:
Induction Heating
Application2:
Soft Switching Applications
Trademark:
Orientalsemi
Transport Package:
Carton
Specification:
TO247
Origin:
China
HS Code:
8541290000
Product Description
 
Product Description

General Description

OST20N135HRF  uses  advanced  Oriental-Semi's patented Trident-Gate Bipolar Transistor (TGBTTM) technology to  provide extremely  low VCE(sat),  low gate charge, and excellent switching performance.This  device  is  suitable  for  resonant  induction heating applications.



Absolute Maximum Ratings at Tj =25ºC  unless otherwise noted  

ParameterSymbolValueUnit
Collector emitter voltageVCES1350V
Gate emitter voltage
VGES		±20V
Transient Gate emitter voltage, TP ≤10µs, D<0.01 ±30V
Continuous collector current1), TC =25 ºC
IC		40
A
Continuous collector current1), TC =100 ºC 20 
Pulsed collector current2), TC =25 ºCIC, pulse60A
Diode forward current1), TC =25 ºC
IF		40
A
Diode forward current1), TC =100 ºC 20 
Diode pulsed current2), TC =25 ºCIF, pulse60A
Power dissipation3), TC =25 ºC
PD		290W
Power dissipation3), TC =100 ºC 145W
Operation and storage temperatureTstg  ,Tj-55 to 150ºC



Thermal Characteristics
ParameterSymbolValueUnit
IGBT thermal resistance, junction-caseRθJC0.43.C/W
Diode thermal resistance, junction-caseRθJC0.43.C/W
Thermal resistance, junction-ambient4)RθJA40.C/W



Electrical Characteristics at Tj =25 ºC  unless otherwise specified
ParameterSymbolMin.Typ.Max.UnitTest condition
Collector-emitter breakdown voltageV(BR)CES1350  VVGE=0 V, IC =0.5 mA


Collector-emitter saturation voltage

VCE(sat)		 1.61.8VVGE =15 V, IC =20 A
   1.82.2VVGE =15 V, IC =25 A
   1.9 VVGE =15 V, IC =20 A,
Tj =150 ºC
Gate-emitter threshold voltageVGE(th)5.15.86.4VVCE =VGE, ID =0.5 mA

Diode forward voltage
VF		 1.51.7
V		VGE =0 V, IF =20 A
   1.9  VGE =0 V, IF =20 A,
Tj =150 ºC
Gate-emitter leakage currentIGES  100nAVCE =0 V, VGE =20 V
Zero gate voltage collector currentICES  10μAVCE =1350 V, VGE =0 V



Dynamic Characteristics
ParameterSymbolMin.Typ.Max.UnitTest condition
Input capacitanceCies 3907 pFVCE =25 V,
VGE =0 V,
ƒ=100 KHz
Output capacitanceCoes 51.3 pF
Reverse transfer capacitanceCres 2.6 pF
Turn-on delay timetd(on) 48 ns
VCC=600 V,
IC =20 A,
VGE =15 V,
RG =10 Ω
Turn-off delay timetd(off) 144 ns
Fall timetf 235 ns
Turn-off energyEoff 1.0 mJ



Gate Charge Characteristics
ParameterSymbolMin.Typ.Max.UnitTest condition
Total gate chargeQg 71.5 nCIC =20 A,
VCC =1080 V,
VGE=15 V
Gate-emitter chargeQge 15.4 nC
Gate-collector chargeQgc 32.8 nC



Note
1)    Calculated continuous current based on maximum allowable junction temperature.
2)    Repetitive rating, pulse width limited by maximum junction temperature.
3)    Pd is based on maximum junction temperature, using junction-case thermal resistance.
4)   The value of RθJA  is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta =25 °C.



Ordering Information
PackageUnits/TubeTubes/Inner BoxUnits/Inner BoxInner Box/Carton BoxUnits/Carton Box
TO247301133061980



Product Information
ProductPackagePb FreeRoHSHalogen Free
OST20N135HRFTO247yesyesyes



 
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