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Enhancement Mode N-Channel Power IGBT Transistor

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Shanghai Winture Electric Co., Ltd.

Audited Supplier 4 years

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Shanghai, China
Joy Li (Ms.)

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Model NO.:

To247 OST20N135HRF

Certification:

RoHS, ISO

Shape:

ST

Shielding Type:

Remote Cut-Off Shielding Tube

Cooling Method:

Naturally Cooled Tube

Function:

Switch Transistor

Working Frequency:

High Frequency

Structure:

Diffusion

Encapsulation Structure:

Plastic Sealed Transistor

Power Level:

Medium Power

Material:

Silicon

Application1:

Induction Heating

Application2:

Soft Switching Applications

Trademark:

Orientalsemi

Transport Package:

Carton

Specification:

TO247

Origin:

China

HS Code:

8541290000

Product Description

General Description

OST20N135HRF uses advanced Oriental-Semi's patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low VCE(sat), low gate charge, and excellent switching performance.This device is suitable for resonant induction heating applications.

Absolute Maximum Ratings at Tj =25ºC unless otherwise noted

Parameter	Symbol	Value	Unit
Collector emitter voltage	VCES	1350	V
Gate emitter voltage	VGES	±20	V
Transient Gate emitter voltage, TP ≤10µs, D<0.01		±30	V
Continuous collector current1), TC =25 ºC	IC	40	A
Continuous collector current1), TC =100 ºC		20
Pulsed collector current2), TC =25 ºC	IC, pulse	60	A
Diode forward current1), TC =25 ºC	IF	40	A
Diode forward current1), TC =100 ºC		20
Diode pulsed current2), TC =25 ºC	IF, pulse	60	A
Power dissipation3), TC =25 ºC	PD	290	W
Power dissipation3), TC =100 ºC		145	W
Operation and storage temperature	Tstg ,Tj	-55 to 150	ºC

Thermal Characteristics

Parameter	Symbol	Value	Unit
IGBT thermal resistance, junction-case	RθJC	0.43	.C/W
Diode thermal resistance, junction-case	RθJC	0.43	.C/W
Thermal resistance, junction-ambient4)	RθJA	40	.C/W

Electrical Characteristics at Tj =25 ºC unless otherwise specified

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Collector-emitter breakdown voltage	V(BR)CES	1350			V	VGE=0 V, IC =0.5 mA
Collector-emitter saturation voltage	VCE(sat)		1.6	1.8	V	VGE =15 V, IC =20 A
			1.8	2.2	V	VGE =15 V, IC =25 A
			1.9		V	VGE =15 V, IC =20 A, Tj =150 ºC
Gate-emitter threshold voltage	VGE(th)	5.1	5.8	6.4	V	VCE =VGE, ID =0.5 mA
Diode forward voltage	VF		1.5	1.7	V	VGE =0 V, IF =20 A
			1.9			VGE =0 V, IF =20 A, Tj =150 ºC
Gate-emitter leakage current	IGES			100	nA	VCE =0 V, VGE =20 V
Zero gate voltage collector current	ICES			10	μA	VCE =1350 V, VGE =0 V

Dynamic Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Input capacitance	Cies		3907		pF	VCE =25 V, VGE =0 V, ƒ=100 KHz
Output capacitance	Coes		51.3		pF
Reverse transfer capacitance	Cres		2.6		pF
Turn-on delay time	td(on)		48		ns	VCC=600 V, IC =20 A, VGE =15 V, RG =10 Ω
Turn-off delay time	td(off)		144		ns
Fall time	tf		235		ns
Turn-off energy	Eoff		1.0		mJ

Gate Charge Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Total gate charge	Qg		71.5		nC	IC =20 A, VCC =1080 V, VGE=15 V
Gate-emitter charge	Qge		15.4		nC
Gate-collector charge	Qgc		32.8		nC

Note
1)    Calculated continuous current based on maximum allowable junction temperature.
2)    Repetitive rating, pulse width limited by maximum junction temperature.
3)    Pd is based on maximum junction temperature, using junction-case thermal resistance.
4) The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta =25 °C.

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