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N-Channel Power Mosfet Pdfn8*8 Osg65r125jf Vds-700V ID-75A RDS (ON) -125milliohm Qg-41.9nc for Telecom Power Solar/UPS

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Model NO.:
PDFN8*8 OSG65R125JF
Certification:
RoHS, ISO
Shape:
Metal Porcelain Tube
Shielding Type:
Sharp Cutoff Shielding Tube
Cooling Method:
Air Cooled Tube
Function:
Switch Transistor
Working Frequency:
High Frequency
Structure:
Diffusion
Encapsulation Structure:
Chip Transistor
Power Level:
High Power
Material:
Silicon
Trademark:
Orientalsemi
Origin:
China
HS Code:
8541290000
Product Description


General Description
The GreenMOS®  high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge.  It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.
The  GreenMOS®   Generic  series  is  optimized  for  extreme  switching  performance  to  minimize switching  loss.  It  is tailored for  high  power density applications to  meet the  highest  efficiency standards.


Features
     Low RDS(on) & FOM
     Extremely low switching loss
     Excellent stability and uniformity

Applications
     PC power
     LED lighting
     Telecom power
     Server power
     EV Charger
     Solar/UPS

Key Performance Parameters

ParameterValueUnit
VDS, min @ Tj(max)700V
ID, pulse75A
RDS(ON), max @ VGS =10V125mΩ
Qg41.9nC


Absolute Maximum Ratings at Tj =25°C unless otherwise noted

ParameterSymbolValueUnit
Drain-source voltageVDS650V
Gate-source voltageVGS±30V
Continuous drain current1) , TC=25 °C
ID		25
A
Continuous drain current1) , TC=100 °C16
Pulsed drain current2) , TC=25 °CID, pulse75A
Continuous diode forward current1) , TC=25 °CIS25A
Diode pulsed current2) , TC=25 °CIS, pulse75A
Power dissipation3) , TC=25 °CPD219W
Single pulsed avalanche energy5)EAS730mJ
MOSFET dv/dt ruggedness, VDS =0…480 Vdv/dt50V/ns
Reverse diode dv/dt, VDS =0…480 V, ISD≤IDdv/dt15V/ns
Operation and storage temperatureTstg , Tj-55 to 150°C


Thermal Characteristics

ParameterSymbolValueUnit
Thermal resistance, junction-caseRθJC0.57°C/W
Thermal resistance, junction-ambient4)RθJA62°C/W


Electrical Characteristics at Tj =25°C unless otherwise specified

ParameterSymbolMin.Typ.Max.UnitTest condition
Drain-source         breakdown voltage
BVDSS		650  
V		VGS =0 V, ID =1 mA
700740 VGS =0 V, ID =1 mA,
Tj =150 °C
Gate threshold
voltage		VGS(th)2.9 3.9VVDS =VGS , ID =1 mA
Drain-source on- state resistance
RDS(ON)		 0.1150.125
Ω		VGS =10 V, ID=12.5 A
 0.278 VGS =10 V, ID=12.5 A, Tj =150 °C
Gate-source
leakage current
IGSS		  100
nA		VGS =30 V
  - 100VGS =-30 V
Drain-source
leakage current		IDSS  1μAVDS =650 V, VGS =0 V


Note
1)   Calculated continuous current based on maximum allowable junction temperature.
2)   Repetitive rating; pulse width limited by max. junction temperature.
3)   Pd is based on max. junction temperature, using junction-case thermal resistance.
4)    The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
5)    VDD=100 V, VGS =10 V, L=80 mH, starting Tj =25 °C.

Ordering Information

Package
Type		Units/
Tube		Tubes/  Inner BoxUnits/   Inner BoxInner Boxes/ Carton BoxUnits/     Carton Box
PDFN 8×8-L250025000525000
PDFN 8×8-S3000130001030000


Product Information

ProductPackagePb FreeRoHSHalogen Free
OSG65R125JFPDFN 8×8yesyesyes


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